GSOT03C to GSOT36C
www.vishay.com
Vishay Semiconductors
Rev. 2.5, 07-Mar-16
9
Document Number: 85824
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL CHARACTERISTICS GSOT04C (T
amb
= 25 °C unless otherwise specified)
between pin 1 to pin 2 or pin 2 to pin1; pin 3 not connected
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
--1lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--4.5V
Reverse voltage at I
R
= 20 μA V
R
4.5 - - V
Reverse current at V
R
= 4.5 V I
R
--20μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
5.5 6.8 7.7 V
Reverse clamping voltage
at I
PP
= 1 A
V
C
-7.59 V
at I
PP
= I
PPM
= 30 A - 15.7 18.8 V
Capacitance
at V
R
= 0 V; f = 1 MHz
C
D
- 155 225 pF
at V
R
= 2 V; f = 1 MHz - 135 - pF
ELECTRICAL CHARACTERISTICS GSOT05C (T
amb
= 25 °C unless otherwise specified)
between pin 1 to pin 2 or pin 2 to pin1; pin 3 not connected
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
--1lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--5.5V
Reverse voltage at I
R
= 10 μA V
R
5.5 - - V
Reverse current at V
R
= 5.5 V I
R
--10μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
6.5 7.5 8.7 V
Reverse clamping voltage
at I
PP
= 1 A
V
C
-8.19.7V
at I
PP
= I
PPM
= 30 A - 17 20.4 V
Capacitance
at V
R
= 0 V; f = 1 MHz
C
D
- 130 175 pF
at V
R
= 4 V; f = 1 MHz - 100 - pF
ELECTRICAL CHARACTERISTICS GSOT08C (T
amb
= 25 °C unless otherwise specified)
between pin 1 to pin 2 or pin 2 to pin1; pin 3 not connected
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
--1lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--8.5V
Reverse voltage at I
R
= 5 μA V
R
8.5 - - V
Reverse current at V
R
= 8.5 V I
R
--5μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
9.5 10.7 11.7 V
Reverse clamping voltage
at I
PP
= 1 A
V
C
- 11.7 14 V
at I
PP
= I
PPM
= 18 A - 18.5 22.2 V
Capacitance
at V
R
= 0 V; f = 1 MHz
C
D
- 80 125 pF
at V
R
= 4 V; f = 1 MHz - 60 - pF
ELECTRICAL CHARACTERISTICS GSOT12C (T
amb
= 25 °C unless otherwise specified)
between pin 1 to pin 2 or pin 2 to pin1; pin 3 not connected
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
--1lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
- - 12.5 V
Reverse voltage at I
R
= 1 μA V
R
12.5 - - V
Reverse current at V
R
= 12.5 V I
R
--1μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
13.5 15.7 16.5 V
Reverse clamping voltage
at I
PP
= 1 A
V
C
- 16.4 19.7 V
at I
PP
= I
PPM
= 12 A - 23.4 28.1 V
Capacitance
at V
R
= 0 V; f = 1 MHz
C
D
-5875pF
at V
R
= 7.5 V; f = 1 MHz - 36 - pF