RT1E050RPTR Datasheet RT1E050RPTR | P1-P3

4V Drive Pch MOSFET

RT1E050RP

 Structure  Dimensions (Unit : mm)

Silicon P-channel MOSFET

Features

1) Low on-resistance.

2) High power package.

3) 4V drive.

 Application

Switching

 Packaging specifications  Inner circuit

Package Taping

Code TR

Basic ordering unit (pieces) 3000

RT1E050RP ○

 Absolute maximum ratings (Ta = 25C)

Symbol Limits Unit

Drain-source voltage V

DSS

30 V

Gate-source voltage V

GSS

20 V

Continuous I

D

5A

Pulsed I

DP

20 A

Continuous I

S

1A

Pulsed I

SP

20 A

Power dissipation P

D

1.25 W

Channel temperature Tch 150 C

Range of storage temperature Tstg 55 to +150 C

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

 Thermal resistance

Symbol Limits Unit

Channel to Ambient Rth (ch-a) 100 C / W

*Mounted on a ceramic board.

Parameter

Type

Source current

(Body Diode)

Drain current

Parameter

(1) Drain

(2) Drain

(3) Drain

(4) Gate

(5) Source

(6) Drain

(7) Drain

(8) Drain

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

Abbreviated symbol :UD

TSST8

(1) (2) (3) (4)

(8) (7) (6) (5)

*2

*1

*

∗2

∗1

(1)

(

4)

(3)(2)

(

8)

(5)(6)(7)

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2010.04 - Rev.A

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RT1E050RP

 Electrical characteristics (Ta = 25C)

Symbol Min. Typ. Max. Unit

Gate-source leakage I

GSS

--10 AV

GS

=20V, V

DS

=0V

Drain-source breakdown voltage V

(BR)DSS

30 - - V I

D

=1mA, V

GS

=0V

Zero gate voltage drain current I

DSS

--1 AV

DS

=30V, V

GS

=0V

Gate threshold voltage V

GS (th)

1.0 - 2.5 V V

DS

=10V, I

D

=1mA

-2636 I

D

=5A, V

GS

=10V

-3650 I

D

=2.5A, V

GS

=4.5V

-4056 I

D

=2.5A, V

GS

=4.0V

Forward transfer admittance l Y

fs

l 3.1 - - S I

D

=5A, V

DS

=10V

Input capacitance C

iss

- 1300 - pF V

DS

=10V

Output capacitance C

oss

- 180 - pF V

GS

=0V

Reverse transfer capacitance C

rss

- 160 - pF f=1MHz

Turn-on delay time t

d(on)

- 10 - ns I

D

=2.5A, V

DD

15V

Rise time t

r

- 15 - ns V

GS

=10V

Turn-off delay time t

d(off)

- 90 - ns R

L

=6.0

Fall time t

f

- 50 - ns R

G

=10

Total gate charge Q

g

- 13 - nC I

D

=5A, V

DD

15V

Gate-source charge Q

gs

- 3.5 - nC V

GS

=5V R

L

=3

Gate-drain charge Q

gd

- 4.5 - nC R

G

=10

*Pulsed

Body diode characteristics (Source-Drain) (Ta = 25C)

Symbol Min. Typ. Max. Unit

Forward Voltage V

SD

--1.2 V I

s

=5A, V

GS

=0V

*Pulsed

Conditions

m

Parameter

Static drain-source on-state

resistance

R

DS (on)

*

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2010.04- Rev.A

Data Sheet

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RT1E050RP

 Electrical characteristics curves

0

1

2

3

4

5

0 0.2 0.4 0.6 0.8 1

V

GS

= -2.5V

Ta=25°C

Pulsed

V

GS

= -4.5V

V

GS

= -4.0V

V

GS

= -2.8V

V

GS

= -3.0V

V

GS

= -10V

0.001

0.01

0.1

1

10

0123

V

DS

= -10V

Pulsed

Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta= - 25°C

1

10

100

1000

0.1 1 10

V

GS

= -4.0V

V

GS

= -4.5V

V

GS

= -10V

Ta=25°C

Pulsed

0.01

0.1

1

10

0 0.5 1 1.5

V

GS

=0V

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta=-25°C

0

1

2

3

4

5

0246810

V

GS

= -2.5V

Ta=25°C

Pulsed

V

GS

= -3.0V

V

GS

= -10V

V

GS

= -4.5V

V

GS

= -4.0V

V

GS

= -2.8V

1

10

100

1000

0.1 1 10

V

GS

= -4.5V

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta= -25°C

1

10

100

1000

0.1 1 10

V

GS

= -10V

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta= -25°C

0.1

1

10

0.01 0.1 1 10

V

DS

= -10V

Pulsed

Ta= -25°C

Ta=25°C

Ta=75°C

Ta=125°C

1

10

100

1000

0.1 1 10

V

GS

= -4.0V

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta= -25°C

Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics

Fig.4 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅰ)

Fig.5 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅱ)

Fig.6 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅲ)

Fig.7 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅳ)

Fig.9 Reverse Drain Current

vs. Sourse-Drain Voltage

Fig.8 Forward Transfer Admittance

vs. Drain Current

DRAIN CURRENT : -I

D

[A]

DRAIN-SOURCE VOLTAGE : -V

DS

[V]

DRAIN-SOURCE VOLTAGE : -V

DS

[V]

DRAIN CURRENT : -I

D

[A]

DRAIN CURRENT : -I

D

[A]

GATE-SOURCE VOLTAGE : -V

GS

[V]

DRAIN-CURRENT : -I

D

[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(on)[mΩ]

DRAIN-CURRENT : -I

D

[A]

STATIC

DRAIN

-

SOURCE

ON

-

STATE

RESISTANCE : R

DS

(on)[mΩ]

DRAIN-CURRENT : -I

D

[A]

STATIC DRAIN-SOURCE ON-STAT

E

RESISTANCE : R

DS

(on)[mΩ]

DRAIN-CURRENT : -I

D

[A]

STATIC

DRAIN

-

SOURCE

ON

-

STATE

RESISTANCE : R

DS

(on)[mΩ]

FORWARD TRANSFER ADMITTANCE : |Yfs| [S]

DRAIN-CURRENT : -I

D

[A]

SOURCE

CURRENT

: -

I

s

[A]

SOURCE-DRAIN VOLTAGE : -V

SD

[V]

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2010.04 - Rev.A

Data Sheet

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RT1E050RPTR

RT1E050RPTR

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