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STTH1R04UY

P1-P3P4-P6P7-P9P10-P12
Characteristics
STTH1R04-Y
4/12
DocID024449 Rev 2
1.1 Characteristics (curves)
Figure 1: Conduction losses versus average
forward current
Figure 2: Forward voltage drop versus forward
current
Figure 3: Relative variation of thermal impedance
junction to case ambient versus pulse duration
(SMA)
Figure 4: Relative variation of thermal impedance
junction to case ambient versus pulse duration
(SMB)
Figure 5: Junction capacitance versus reverse
voltage applied (typical values)
Figure 6: Reverse recovery charges versus
dI
F
/ dt (typical values)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.0 0.2 0.4 0.6 0.8 1.0 1.2
P (W)
F(
AV
)
T
δ
=tp/T
tp
I (A)
F( AV )
δ = 1
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
I
FM
(A)
0.1
1.0
10.0
100.0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
T
j
=150°C
(Maximum values)
T
j
=150
°C
(Typical values)
T
j
=25°C
(Maximum values)
V
FM
(V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Single pulse
SMA
S
cu
= 1cm²
Z /R
th
(j-a) th(j-a)
t
P
(s)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Single pulse
t
P
(s)
SMB
S = 1 cm
cu
Z /R
th
(j-a) th(j-a)
1
10
100
1 10 100 1000
C(pF)
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
V
R
(V)
0
4
8
12
16
20
24
28
32
36
40
10 100 1000
Q
RR
(nC)
I
F
= 1 A
V
R
=320 V
T
j
=125 °C
T
j
=25 °C
dI
F
/dt(A/µs)
STTH1R04-Y
Characteristics
DocID024449 Rev 2
5/12
Figure 7: Reverse recovery time versus dI
F
/ dt
(typical values)
Figure 8: Peak reverse recovery current versus
dI
F
/ dt (typical values)
Figure 9: Relative variation of dynamic parameters
versus junction temperature
Figure 10: Transient peak forward voltage versus
dI
F
/ dt (typical values)
Figure 11: Forward recovery time versus dI
F
/ dt
(typical values)
Figure 12: Thermal resistance junction to ambient
total versus copper surface under each lead (SMA)
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
10 100 1000
t
RR
(ns)
I
F
= 1 A
V
R
=320 V
T
j
=125 °C
T
j
=25 °C
dI
F
/dt(A/µs)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
10 100 1000
I
RM
(A)
I
F
= 1 A
V
R
=320 V
T
j
=125 °C
T
j
=25 °C
dI
F
/dt(A/µs)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25 50 75 100 125 150
Q
RR
; I
RM
[T
j
] / Q
RR
; I
RM
[T
j
=125°C]
I
RM
Q
RR
I
F
= 1 A
V
R
=320 V
T
j
(°C)
Q
RR
; I
RM
[T
j
] / Q
RR
; I
RM
[T
j
=125°C]
0
5
10
15
20
25
30
0 50 100 150 200 250 300 350 400 450 500
V
Fp
(V)
I
F
=1 A
T
j
=125 °C
dI
F
/dt(A/µs)
0
5
10
15
20
25
30
35
40
45
50
55
0 50 100 150 200 250 300 350 400 450 500
t
FR
(ns)
I
F
=1 A
T
j
=125 °C
dI
F
/dt(A/µs)
R
th(j-a)
( C/W)°
0
50
100
150
200
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
S
CU
(cm²)
SMA
epoxy printed board FR4, copper thickness Cu = 35 µm
Characteristics
STTH1R04-Y
6/12
DocID024449 Rev 2
Figure 13: Thermal resistance junction to ambient
total versus copper surface under each lead (SMB)
R
th(j-a)
( C/W)
0
50
100
150
200
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
SMB
°
S
CU
(cm²)
epoxy printed board FR4, copper thickness Cu = 35 µm
P1-P3P4-P6P7-P9P10-P12

STTH1R04UY

Mfr. #:
Buy STTH1R04UY
Manufacturer:
STMicroelectronics
Description:
Rectifiers Auto ultrafast Recovry Hi VTG diode
Lifecycle:
New from this manufacturer.
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