F1T4G A1G

CREAT BY ART
- Glass passivated chip junction
- High efficiency, Low VF
- High current capability
- High reliability
- High surge current capability
- Low power loss
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
V
RRM
50 100 200 400 600 800 1000 V
V
RMS
35 70 140 280 420 560 700 V
V
DC
50 100 200 400 600 800 1000 V
I
F(AV)
A
Trr 250 ns
Cj pF
R
θJA
O
C/W
T
J
O
C
T
STG
O
C
Document Number: DS_D1505007 Version: G14
F1T1G thru F1T7G
Glass Passivated Fast Recover
y
Rectifiers
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
Taiwan Semiconductor
Case: TS-1
TS-1
Weight: 0.2g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T
A
=25 unless otherwise noted)
F1T
5G
F1T
6G
F1T
7G
UNITPARAMETER SYMBOL
F1T
1G
F1T
2G
F1T
3G
F1T
4G
A
μA
5
150
30
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Maximum instantaneous forward voltage (Note 1)
@ 1 A
V
F
15
V
Maximum reverse current @ rated VR T
J
=25
T
J
=125
I
R
1.3
150 500Maximum reverse recovery time (Note 2)
Maximum DC blocking voltage
Maximum average forward rectified current 1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
Storage temperature range - 55 to +150
- 55 to +150
Typical junction capacitance (Note 3)
Typical thermal resistance 90
Operating junction temperature range
CREAT BY ART
PART NO.
PART NO.
F1T1G
F1T1G
F1T1G
(TA=25 unless otherwise noted)
Document Number: DS_D1505007 Version: G14
EXAMPLE
ORDERING INFORMATION
Taiwan Semiconductor
F1T1G thru F1T7G
Green compound
H A0 AEC-Q101 qualifiedF1T1GHA0
AEC-Q101
QUALIFIED
PACKING CODE
GREEN COMPOUND
CODE
DESCRIPTION
A0
3,000 / Ammo box (26mm taping)
R0 TS-1 5,000 / 13" Paper reel
B0 TS-1 1,000 / Bulk packing
TS-1
PACKING CODE GREEN COMPOUND
CODE
PACKAGE PACKING
Prefix "H"
A0
Suffix "G"
TS-1 3,000 / Ammo box (52mm taping)
A1
AEC-Q101
QUALIFIED
PREFERRED P/N
F1TxG
(Note 1)
RATINGS AND CHARACTERISTICS CURVES
F1T1G A0
F1T1G A0G A0 G
Note 1: "x" defines voltage from 50V (F1T1G) to 1000V (F1T7G)
0
0.25
0.5
0.75
1
1.25
1.5
0 25 50 75 100 125 150 175
AVERAGE FORWARD CURRENT (A)
AMBIENT TEMPERATURE (
o
C)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
RESISTIVE OR
INDUCTIVE LOAD
0
10
20
30
40
50
1 10 100
PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Sine Wave
0.1
1
10
100
1000
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE CURRENT (μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 2- TYPICAL REVERSE CHARACTERISTICS
TJ=25
TJ=125
TJ=75
0.01
0.1
1
10
0.4 0.6 0.8 1 1.2 1.4 1.6
INSTANTANEOUS FORWARD CURRENT
(A)
FORWARD VOLTAGE (V)
FIG. 4- TYPICAL FORWARD CHARACTERISTICS
Pulse Width=300μs
1% Duty Cycle
CREAT BY ART
Min Max Min Max
A 2.00 2.70 0.079 0.106
B 0.53 0.64 0.021 0.025
C 25.40 - 1.000 -
D 3.00 3.30 0.118 0.130
E 25.40 - 1.000 -
P/N = Specific Device Code
G = Green Compound
YW = Date Code
F = Factory Code
Document Number: DS_D1505007 Version: G14
MARKING DIAGRAM
F1T1G thru F1T7G
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM.
Unit (mm) Unit (inch)
1
10
100
1 10 100
JUNCTION CAPACITANCE (pF)
REVERSE VOLTAGE (V)
FIG. 5- TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vslg=50mVp-p

F1T4G A1G

Mfr. #:
Manufacturer:
Taiwan Semiconductor
Description:
Rectifiers 150ns 1A 400V Fast Recov Rectifier
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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