TSM210N02CX RFG

TSM210N02CX

20V N-Channel Power MOSFET

1/5

Version: A14

SOT

-

23

Key Parameter Performance

Parameter Value

Unit

V

DS

20 V

R

DS(on)

(max)

V

GS

= 4.5V

21

mΩ

V

GS

= 2.5V

25

V

GS

= 1.8V

32

Q

g

5.8 nC

Ordering Information

Part No. Package Packing

TSM210N02CX RFG SOT-23 3kpcs / 7” Reel

Note:

“G” denotes for Halogen- and Antimony-free as those which contain

<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds

Block Diagram

N-Channel MOSFET

Absolute Maximum Ratings

(T

C

= 25°C unless otherwise noted)

Parameter Symbol

Limit

Unit

Drain-Source Voltage V

DS

20

V

Gate-Source Voltage V

GS

±10

V

Continuous Drain Current

T

C

= 25°C

I

D

6.7

A

T

C

= 100°C

4.2

A

Pulsed Drain Current

(Note 1)

I

DM

26.8

A

Power Dissipation @ T

C

= 25°C P

D

1.56 W

Operating Junction Temperature T

J

150 °C

Storage Temperature Range T

STG

-55 to +150

°C

Thermal Performance

Parameter Symbol Limit

Unit

Thermal Resistance - Junction to Ambient R

ӨJA

80 °C/W

Pin Definition

:

1. Gate

2. Source

3. Drain

TSM210N02CX

20V N-Channel Power MOSFET

2/5

Version: A14

Electrical Specifications

(T

C

= 25°C unless otherwise noted)

Parameter Conditions Symbol

Min Typ Max

Unit

Static

Drain-Source Breakdown Voltage V

GS

= 0V, I

D

= 250µA BV

DSS

20 -- -- V

Drain-Source On-State Resistance

V

GS

= 4.5V, I

D

= 4A

R

DS(ON)

-- 19 21

mΩ

V

GS

= 2.5V, I

D

= 3A

-- 22 25

V

GS

= 1.8V, I

D

= 2A

-- 26 32

Gate Threshold Voltage V

DS

= V

GS

, I

D

= 250µA V

GS(TH)

0.3 0.6 0.8 V

Zero Gate Voltage Drain Current

V

DS

= 20V, V

GS

= 0V

I

DSS

-- -- 1

µA

V

DS

= 16V, T

J

= 125°C -- -- 10

Gate Body Leakage V

GS

= ±10V, V

DS

= 0V I

GSS

-- -- ±100

nA

Forward Transconductance

(Note 2)

V

DS

= 10V, I

S

= 4A g

fs

-- 9.5 -- S

Dynamic

Total Gate Charge

(Note 2,3)

V

DS

= 10V, I

D

= 4A,

V

GS

= 4.5V

Q

g

-- 5.8 --

nC

Gate-Source Charge

(Note 2,3)

Q

gs

-- 0.6 --

Gate-Drain Charge

(Note 2,3)

Q

gd

-- 2 --

Input Capacitance

V

DS

= 10V, V

GS

= 0V,

f = 1.0MHz

C

iss

-- 600 --

pF

Output Capacitance C

oss

-- 70 --

Reverse Transfer Capacitance C

rss

-- 45 --

Switching

Turn-On Delay Time

(Note 2,3)

V

DD

= 10V, I

D

= 1A,

V

GS

= 4.5V, R

GEN

=25Ω

t

d(on)

-- 5.0 --

ns

Turn-On Rise Time

(Note 2,3)

t

r

-- 14.4 --

Turn-Off Delay Time

(Note 2,3)

t

d(off)

-- 30.0 --

Turn-Off Fall Time

(Note 2,3)

t

f

-- 9.2 --

Source-Drain Diode Ratings and Characteristic

Maximum Continuous Drain-Source

Diode Forward Current

Integral reverse diode in

the MOSFET

I

S

-- -- 6.7 A

Maximum Pulse Drain-Source Diode

Forward Current

I

SM

-- -- 26.8 A

Diode-Source Forward Voltage V

GS

= 0V, I

S

= 1A V

SD

-- -- 1 V

Note:

1. Pulse width limited by safe operating area

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%

3. Switching time is essentially independent of operating temperature.

TSM210N02CX

20V N-Channel Power MOSFET

3/5

Version: A14

Electrical Characteristics Curve

Continuous Drain Current vs. T

C

Gate Charge

On-Resistance vs. Junction Temperature

Threshold Voltage vs. Junction Temperature

Maximum Safe Operating Area

Normalized Thermal Transient Impedance Curve

T

C

, Case Temperature (°C)

I

D

, Continuous Drain Current (A)

V

GS

,

Gate to Source Voltage (V)

Qg, Gate Charge (nC)

Normalized On Resistance (m

W

)

T

J

, Junction Temperature (°C)

T

J

, Junction Temperature (°C)

Normalized Gate Threshold Voltage (V)

I

D

,

Continuous Drain Current (A)

V

DS

, Drain to Source Voltage (V)

Square Wave Pulse Duration

(s)

Normalized Thermal Response (R

θJA

)

TSM210N02CX RFG

Mfr. #:

Buy TSM210N02CX RFG

Manufacturer:

Taiwan Semiconductor

Description:

MOSFET 20V P channel Power Mosfet

Lifecycle:

New from this manufacturer.

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TSM210N02CX RFG