OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

FDC6332L

P1-P3P4-P4
June 2003
2003Fairchild Semiconductor Corporation
FDC6332L Rev D(W)
FDC6332L
Common Source Load Switch
P-Channel 1.8V Specified PowerTrench
MOSFET
General Description
This Load Switch integrates an N-Channel Power
MOSFET that drives Common-Source P-Channels and
in a small SuperSot
TM
–6 package. It uses Fairchild’s
advanced low voltage PowerTrench process. The
R
DS(ON)
is 750 mΩ per the switch @ V
GS
1.8Vand is
optimized for battery power management applications.
Applications
• Battery management/Charger Application
• Accessory load switching
Features
• –1 A, 8 V. R
DS(ON)
= 350 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 500 mΩ @ V
GS
= –2.5 V
R
DS(ON)
= 750 mΩ @ V
GS
= –1.8 V
• N-Channel MOSFET includes Zener protection for
ESD ruggedness (>6KV Human body model)
• High performance trench technology for extremely
low R
DS(ON)
D1
S2
G1
D2
S1
G2
SuperSOT -6
TM
Pin 1
SuperSOT™-6
On/Off
G1/G2
Vin
S1/S2
Vout
GND
6
5
4
1
2
3
On/Off
G1/G2
Vin
S1/S2
Vout
GND
6
5
4
1
2
3
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
IN
Input Voltage
±8
V
V
ON
Turn-On Voltage 8 V
I
Load
Load Current – Continuous (Note 1) –1.0 A
– Pulsed –2.0
P
D
Maximum Power Dissipation (Note 1) 0.7
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1) 160
°C/W
R
θJC
Thermal Resistance, Junction-to-Case (Note 1) 90
Package Marking and Ordering Information
Device Reel Size Tape width Quantity
.332 FDC6332L 7’’ 8mm 3000 units
FDC6332L
Equivalent Circuit
V
DROP
IN
OUT
ON/OFF
Equivalent Circuit
V
DROP
V
DROP
IN
OUTOUT
ON/OFFON/OFF
FDC6332L Rev D(W)
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
IN
Input – Output Breakdown Voltage
V
ON/OFF
= 0 V, I
D
= –250 µA
–20 V
IR
IN
Reverse Input Current V
IN
= –8V, V
ON/OFF
= 0 V –1
µA
BVG
OFF
Driver FET Gate Breakdown Voltage I
G
= 250uA 8 V
I
GOFF
Driver FET Gate Leakage Current V
G
= 8 V 100 nA
On Characteristics (Note 2)
V
IN
Input Voltage Range 1.8 2.5 8 V
V
ON
Turn-On Voltage Range 1.5 8 V
V
OFF
Turn-off Voltage Range –0.2 0.2 V
I
LOAD
Output Load Current V
IN
= –5 V V
ON
= –4.5V –1 A
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 4.5 V, I
D
= –1.0A
V
GS
= 2.5 V, I
D
= –0.9 A
V
GS
= 1.8 V, I
D
= –0.7 A
230
338
643
350
500
750
mΩ
R
ON
Loadswitch On-Resistance
V
IN
= 8 V, I
D
= –1.0 A
V
IN
= 8 V, I
D
= –0.9 A
V
IN
= 8 V, I
D
= –0.7 A
409
411
420
mΩ
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current –0.6 A
V
SD
Drain–Source Diode Forward Voltage V
ON/OFF
= 0 V, I
S
= –0.6 A (Note 2 –0.9 –1.2 V
Notes:
1. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 90°C/W when
mounted on a 1in
2
pad
of 2 oz copper
b) 160°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDC6332L Load Switch Application Circuit
FDC6332L
Q2
IN
OUT
ON/OFF
LOAD
Q3
Q1
S1/S2
G1/G2
FDC6332L Rev D(W)
Typical Characteristics
0
0.2
0.4
0.6
0.8
1
1.2
0 0.2 0.4 0.6 0.8 1
-I
L
, (A)
-V
DROP
, (V)
T
J
= 25
O
C
T
J
= 125
O
C
V
IN
= 2.5V
V
ON/OFF
= 2.5V to 8V
PW = 300us, D <
2%
0
0.2
0.4
0.6
0.8
1
0 0.2 0.4 0.6 0.8 1
-I
L
, (A)
-V
DROP
, (V)
T
J
= 25
O
C
T
J
= 125
O
C
V
IN
= 3.3V
V
ON/OFF
= 2.5V to 8V
PW = 300us, D <
2%
Figure 1. Conduction Voltage Drop
Variation with Load Current.
Figure 2. Conduction Voltage Drop
Variation with Load Current.
0
0.1
0.2
0.3
0.4
0.5
0.6
0 0.2 0.4 0.6 0.8 1
-I
L
, (A)
-V
DROP
, (V)
V
IN
= 8V
V
ON/OFF
= 2.5V to 8V
PW = 300us, D <
2%
T
J
= 125
O
C
T
J
= 25
O
C
0
0.4
0.8
1.2
1.6
2
12345678
-V
IN
, INPUT VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (W)
T
J
= 25
O
C
T
J
= 125
O
C
I
L
= 1A
V
ON/OFF
= 2.5V to 8V
PW = 300us, D <
2%
Figure 3. Conduction Voltage Drop
Variation with Load Current.
Figure 4. On-Resistance Variation
With Input Voltage
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 160 °C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P
(p
k
)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 5. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1
Transient thermal response will change depending on the circuit board design.
FDC6332L
P1-P3P4-P4

FDC6332L

Mfr. #:
Buy FDC6332L
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 1.8V P-Ch MOSFET Common Source
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet