PMEG3015EH_EJ_3 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 13 January 2010 3 of 9
NXP Semiconductors
PMEG3015EH; PMEG3015EJ
30 V, 1.5 A ultra low V
F
MEGA Schottky barrier rectifiers
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm
2
.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating are available on request.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm
2
.
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
Table 6. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from junction
to ambient
in free air
PMEG3015EH
[1][2]
- - 330 K/W
[2][3]
- - 150 K/W
PMEG3015EJ
[1][2]
- - 350 K/W
[2][3]
- - 150 K/W
R
th(j-sp)
thermal resistance from junction
to solder point
PMEG3015EH - - 60 K/W
PMEG3015EJ - - 55 K/W
Table 8. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage I
F
=1mA
[1]
- 125 160 mV
I
F
=10mA
[1]
- 185 220 mV
I
F
=100mA
[1]
- 255 290 mV
I
F
=500mA
[1]
- 330 380 mV
I
F
=1A
[1]
- 400 480 mV
I
F
=1.5A
[1]
- 440 550 mV
I
R
reverse current V
R
= 10 V - 60 150 μA
V
R
= 30 V - 400 1000 μA
C
d
diode capacitance V
R
=1V; f=1MHz - 6072pF
