RS3GHE3/57T

RS3A, RS3B, RS3D, RS3G, RS3J, RS3K
www.vishay.com
Vishay General Semiconductor
Revision: 23-Feb-16
1
Document Number: 88709
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Fast Switching Rectifier
FEATURES
Low profile package
Ideal for automated placement
Glass passivated pellet chip junction
Fast switching for high efficiency
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
AEC-Q101 qualified
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer, automotive and telecommunication.
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
3.0 A
V
RRM
50 V, 100 V, 200 V, 400 V, 600 V, 800 V
I
FSM
100 A
t
rr
150 ns, 250 ns, 500 ns
V
F
1.3 V
T
J
max. 150 °C
Package DO-214AB (SMC)
Diode variation Single die
DO-214AB (SMC)
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL RS3A RS3B RS3D RS3G RS3J RS3K UNIT
Device marking code RA RB RD RG RJ RK
Maximum repetitive peak reverse voltage V
RRM
50 100 200 400 600 800 V
Maximum RMS voltage V
RMS
35 70 140 280 420 500 V
Maximum DC blocking voltage V
DC
50 100 200 400 600 800 V
Maximum average forward rectified current at T
L
= 75 °C I
F(AV)
3.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
100 A
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
RS3A, RS3B, RS3D, RS3G, RS3J, RS3K
www.vishay.com
Vishay General Semiconductor
Revision: 23-Feb-16
2
Document Number: 88709
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.3" x 0.3" (8.0 mm x 8.0 mm) copper pad area
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL RS3A RS3B RS3D RS3G RS3J RS3K UNIT
Maximum instantaneous
forward voltage
2.5 A V
F
1.3 V
Maximum DC reverse current at
rated DC blocking voltage
T
A
= 25 °C
I
R
10
μA
T
A
= 125 °C 250
Maximum reverse recovery time
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
150 250 500 ns
Typical junction capacitance 4.0 V, 1 MHz C
J
44 34 pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL RS3A RS3B RS3D RS3G RS3J RS3K UNIT
Typical thermal resistance
R
JA
(1)
50
°C/W
R
JL
(1)
15
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
RS3J-E3/57T 0.211 57T 850 7" diameter plastic tape and reel
RS3J-E3/9AT 0.211 9AT 3500 13" diameter plastic tape and reel
RS3JHE3_A/H
(1)
0.211 H 850 7" diameter plastic tape and reel
RS3JHE3_A/I
(1)
0.211 I 3500 13" diameter plastic tape and reel
Lead Temperature (°C)
Average Forward Rectified Current (A)
75
150
0
25
50
100
125
0
0.5
2.5
1.5
Resistive or Inductive Load
P. C . B . M o unted
0.3" x 0.3" (8.0 mm x 8.0 mm)
Copper Pad Areas
2.0
1.0
3.0
0
125
150
25
50
75
100
1 10010
Peak Forward Surge Current /A)
Number of Cycles at 60 Hz
T
L
= 75 °C
8.3 ms Single Half Sine-Wave
RS3A, RS3B, RS3D, RS3G, RS3J, RS3K
www.vishay.com
Vishay General Semiconductor
Revision: 23-Feb-16
3
Document Number: 88709
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
1.8
2.0
0.4
0.6
0.8
1.0
1.2
1.4
1
10
100
0.1
Pulse Width = 300 µs
1 % Duty Cycle
T
J
= 25 °C
1.6
T
J
= 125 °C
T
J
= - 40 °C
T
J
= 125 °C
T
J
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
020406080 100
Instantaneous Reverse Current (µA)
100
10
1
0.1
0.01
T
J
= 75 °C
RS3A thr
u RS3G
100
10
1
1 10 100
Reverse Voltage (V)
Junction Capacitance (pF)
RS3J thru RS3K
0.01
0.1
1
10
100
0.1
1
10
100
Mounted on 0.20" x 0.27" (5 mm x 7 mm)
Copper Pad Areas
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
Cathode Band
DO-214AB (SMC)
0.126 (3.20)
0.114 (2.90)
0.246 (6.22)
0.220 (5.59)
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
0.060 (1.52)
0.030 (0.76)
0.103 (2.62)
0.079 (2.06)
Mounting Pad Layout
0.126 (3.20) MIN.
0.060 (1.52) MIN.
0.185 (4.69) MAX.
0.320 (8.13) REF.

RS3GHE3/57T

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers RECOMMENDED ALT 78-RS3GHE3_A/H
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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