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VN540SPTR-E

P1-P3P4-P6P7-P9P10-P12P13-P13
Rev 1
November 2005 1/13
13
VN540-E / VN540SP-E
VN540-12-E
SINGLE HIGH SIDE SMART
POWER SOLID STATE RELAY
General Features
■ OUTPUT CURRENT (CONTINUOUS) : 2.8A
■ DIGITAL INPUT CLAMPED AT 32V
■ PROTECTION AGAINST:
– LOSS OF GROUND
– SHORTED LOAD AND OVER-
TEMPERATURE
■ BUILT-IN CURRENT LIMITER
■ UNDERVOLTAGE SHUT-DOWN
■ OPEN DRAIN DIAGNOSTIC OUTPUT
■ FAST DEMAGNETIZATION OF INDUCTIVE
LOADS
Description
The VN540-E, VN540SP-E, VN540-12-E are
monolithic devices designed in
STMicroelectronics VIPower technology, intended
for driving resistive or inductive loads with one
side connected to ground. Active current limitation
avoids the system power supply dropping in case
of shorted load. Built-in thermal shut-down
protects the chip from overtemperature. The open
drain diagnostic output indicates over-
temperature conditions.
Type
V
demag
R
DSon
I
out
V
CC
VN540-E
VN540SP-E
VN540-12-E
V
CC
-55V
50mΩ 2.8A 36V
PENTAWATT(012Y) PENTAWATT
PowerSO-10
TM
www.st.com
Block Diagram
VN540-E / VN540SP-E / VN540-12-E
2/13
Table 1. Absolute Maximum Rating
Figure 1. Connection Diagram (Top View)
Figure 2. Current and Voltage Conventions
Symbol Parameter Value Unit
V
CC
Power supply voltage 45 V
-V
CC
Reverse supply voltage -4.0 V
I
OUT
Maximum DC load current Internally limited A
I
R
Reverse output current -10 A
I
IN
Input current ± 10 mA
I
STAT
Status pin current ± 10 mA
V
ESD
Electrostatic discharge (R = 1.5KW; C = 100pF) 2000 V
P
TOT
Power dissipation at T
c
= 25°C
Internally limited w
T
J
Junction operating temperature Internally limited °C
T
STG
Storage Temperature -55 to 150 °C
E
AS
Single pulse avalanche energy 500
VN540-E / VN540SP-E / VN540-12-E
3/13
Table 2. Thermal data
Electrical Chracteristics (10V < V
CC
< 36V; -25°C < T
J
< 85°C; unless otherwise specified)
Table 3. Power Section
Table 4. Switching
Symbol Parameter
Value
Unit
PowerSO-10 Pentawatt
R
thJC
Thermal resistance junction-case Max 1.5 2.0 °C/W
R
thJA
Thermal resistance junction-ambient Max 50 60 °C/W
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
CC
Supply voltage 10 36 V
R
ON
On state resistance
I
OUT
= 2.8A; T
J
= 25°C
I
OUT
= 2.8A;
50
90
mΩ
mΩ
I
S
Supply current
OFF state
ON state; T
J
= 125°C
I
OUT
= 0A
1
3
mA
mA
I
LS
Output leakage current
Channel OFF
V
CC
= 45V
100 µΑ
I
LGND
Output current at turn-off
V
CC
= V
IN
= V
GND
= V
STAT
= 24V
T
J
= - 25°C < T
J
< 100°C
2mA
V
OL
Low state output voltage
V
IN
= V
IL;
R
LOAD
>= 10MΩ
1.5 V
V
demag
Output voltage at turn-off
I
OUT
= 2.8A; L
LOAD
>= 1mH V
CC
-65 V
CC
-55 V
CC
-45
V
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(ON)
Turn-on delay on output
current
I
OUT
= 2.8A, Resistive Load Input rise
time < 0.1µs, V
CC
= 24V; T
J
= 25°C
40 µs
t
r
Rise time of output
current
I
OUT
= 2.8A, Resistive Load Input rise
time < 0.1µs, V
CC
= 24V; T
J
= 25°C
60 µs
t
d(OFF)
Turn-off delay time of
output current
I
OUT
= 2.8A, Resistive Load Input rise
time < 0.1µs, V
CC
= 24V; T
J
= 25°C
60 µs
t
f
Fall time of Output
current
I
OUT
= 2.8A, Resistive Load Input rise
time < 0.1µs, V
CC
= 24V; T
J
= 25°C
25 µs
dI/dt
(on)
Turn-on current average
slope
I
OUT
= 2.8A,
I
OUT
= I
LIM
; 25°C < T
J
< 140°C
0.5
2
Α/µs
dI/dt
(off)
Turn-off current average
slope
I
OUT
= 2.8A,
I
OUT
= I
LIM
; 25°C < T
J
< 140°C
2
4
Α/µs
P1-P3P4-P6P7-P9P10-P12P13-P13

VN540SPTR-E

Mfr. #:
Buy VN540SPTR-E
Manufacturer:
STMicroelectronics
Description:
Gate Drivers SOLID STATE RELAY
Lifecycle:
New from this manufacturer.
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