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BSC093N04LSGATMA1
P1-P3
P4-P4
© 2009 IXYS All rights reser
ved
4 - 4
20090209c
IXKP 13N60C5
IXYS reserves the right to change limits, test conditions and dimensions.
sing
le pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
1
10
0
10
-1
10
-2
t
p
[s]
Z
C
J
h
t
]
W
/
K
[
540
580
620
660
700
-60
-20
20
60
100
140
180
T
j
[°C]
V
)
S
S
D
(
R
B
]
V
[
0
100
200
300
20
6
0
10
0
14
0
180
T
j
[°C]
E
S
A
]
J
m
[
Ciss
Coss
Crss
10
5
10
4
10
3
10
2
10
1
10
0
0
1
00
2
00
300
4
00
5
00
V
DS
[V]
C]
F
p
[
0
1
2
3
4
5
6
7
8
9
10
0
5
10
15
20
25
Q
gat
e
[nC]
V
S
G
]
V
[
25 °C
150 °C
25 °C,
98%
150 °C,
98%
10
2
10
1
10
0
10
-1
0
0
.5
1
1.5
2
V
SD
[V]
I
F
]
A
[
25 °C
150 °C
0
10
20
30
40
50
02468
1
0
V
GS
[V]
I
D
]
A
[
typ
98
%
0
0.2
0.4
0.6
0.8
1
-60
-20
20
60
100
140
180
T
j
[°C]
R
)
n
o
(
S
D
[
Ω
]
6.5 V
7V
10 V
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0
5
10
15
20
2
5
I
D
[A]
R
)
n
o
(
S
D
[
Ω
]
5V
5.5 V
6V
V
DS
=
T
JV
= 150°C
I
D
= 6
.6 A
V
GS
= 10 V
V
DS
> 2
·
R
DS(
on) max
· I
D
T
J
=
T
J
=
V
DS
= 120 V
V
GS
= 0 V
f = 1 MHz
I
D
= 4.4 A
I
D
= 0.25 mA
D
= t
p
/T
I
D
= 6.6 A
pu
l
s
ed
Fig.
5 Drain-source on-state resistance
Fig.
4
T
yp.
drain-source on-state
resistance characteristics of IGBT
Fig.
7 Forw
ard character
istic
of re
verse diode
Fig.
8
T
yp.
gate charge
Fig.
10 A
valanche energy
Fig.
11 Drain-source breakdo
wn voltage
Fig.
6
T
yp.
transf
er characteristics
Fig.
9
T
yp.
capacitances
Fig.
12 Max.
transient thermal
impedance
P1-P3
P4-P4
BSC093N04LSGATMA1
Mfr. #:
Buy BSC093N04LSGATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 40V 49A TDSON-8
Lifecycle:
New from this manufacturer.
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IXKP13N60C5
BSC093N04LSGATMA1