2004 Jan 14 2
NXP Semiconductors Product data sheet
High-speed double diode BAV74
FEATURES
• Small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage: max. 50 V
• Repetitive peak reverse voltage: max. 60 V
• Repetitive peak forward current: max. 450 mA.
APPLICATIONS
• High-speed switching in thick and thin-film circuits.
DESCRIPTION
The BAV74 consists of two high-speed switching diodes
with common cathodes, fabricated in planar technology,
and encapsulated in a small SOT23 plastic SMD package.
MARKING
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W: Made in China.
PINNING
TYPE NUMBER MARKING CODE
(1)
BAV74 JA*
PIN DESCRIPTION
1 anode (a1)
2 anode (a2)
3 cathode
Fig.1 Simplified outline (SOT23) and symbol.
ns
21
3
Top view
MAM108
21
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
RRM
repetitive peak reverse
voltage
− 60 V
V
R
continuous reverse voltage − 50 V
I
F
continuous forward current single diode loaded; note 1; see Fig.2 − 215 mA
double diode loaded; note 1; see Fig.2 − 125 mA
I
FRM
repetitive peak forward current − 450 mA
I
FSM
non-repetitive peak forward
current
square wave; T
j
= 25 °C prior to surge; see Fig.4
t = 1 µs − 4 A
t = 1 ms − 1 A
t = 1 s − 0.5 A
P
tot
total power dissipation T
amb
= 25 °C; note 1 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
