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NJW21194G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 1
1 Publication Order Number:
NJW21193/D
NJW21193G (PNP)
NJW21194G (NPN)
Silicon Power Transistors
The NJW21193G and NJW21194G utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
• Total Harmonic Distortion Characterized
• High DC Current Gain
• Excellent Gain Linearity
• High SOA
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
250 Vdc
Collector−Base Voltage V
CBO
400 Vdc
Emitter−Base Voltage V
EBO
5.0 Vdc
Collector−Emitter Voltage − 1.5 V V
CEX
400 Vdc
Collector Current − Continuous I
C
16 Adc
Collector Current − Peak (Note 1) I
CM
30 Adc
Base Current − Continuous I
B
5.0 Adc
Total Power Dissipation @ T
C
= 25°C
Derate Above 25°C
P
D
200
1.6
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−   65 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Case
R
q
JC
0.625 °C/W
Thermal Resistance,
Junction−to−Ambient
R
q
JA
40 °C/W
16 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
250 VOLTS, 200 WATTS
http://onsemi.com
Device Package Shipping
ORDERING INFORMATION
TO−3P
CASE 340AB
STYLES 1,2,3
MARKING
DIAGRAM
NJW21194G TO−3P
(Pb−Free)
30 Units/Rail
NJW21193G TO−3P
(Pb−Free)
30 Units/Rail
NJW2119xG
AYWW
x = 3 or 4
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
1
2
3
4
123
1
BASE
EMITTER 3
COLLECTOR 2, 4
1
BASE
EMITTER 3
COLLECTOR 2, 4
PNP
NPN
NJW21193G (PNP) NJW21194G (NPN)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 100 mAdc, I
B
= 0)
V
CEO(sus)
250 − − Vdc
Collector Cutoff Current
(V
CE
= 200 Vdc, I
B
= 0)
I
CEO
− − 100
mAdc
Emitter Cutoff Current
(V
CE
= 5 Vdc, I
C
= 0)
I
EBO
− − 100
mAdc
Collector Cutoff Current
(V
CE
= 250 Vdc, V
BE(off)
= 1.5 Vdc)
I
CEX
− − 100
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(V
CE
= 50 Vdc, t = 1 s (non−repetitive)
(V
CE
= 80 Vdc, t = 1 s (non−repetitive)
I
S/b
4.0
2.25
−
−
−
−
Adc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 8 Adc, V
CE
= 5 Vdc)
(I
C
= 16 Adc, I
B
= 5 Adc)
h
FE
20
8
−
−
80
−
Base−Emitter On Voltage
(I
C
= 8 Adc, V
CE
= 5 Vdc)
V
BE(on)
− − 2.2 Vdc
Collector−Emitter Saturation Voltage
(I
C
= 8 Adc, I
B
= 0.8 Adc)
(I
C
= 16 Adc, I
B
= 3.2 Adc)
V
CE(sat)
−
−
−
−
1.4
4
Vdc
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
V
RMS
= 28.3 V, f = 1 kHz, P
LOAD
= 100 W
RMS
h
FE
unmatched
(Matched pair h
FE
= 50 @ 5 A/5 V) h
FE
matched
T
HD
−
−
0.8
0.08
−
−
%
Current Gain Bandwidth Product
(I
C
= 1 Adc, V
CE
= 10 Vdc, f
test
= 1 MHz)
f
T
4 − − MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1 MHz)
C
ob
− − 500 pF
I
C
COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
f, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
T
PNP NJW21193G
f, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
T
NPN NJW21194G
I
C
COLLECTOR CURRENT (AMPS)
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
1.0 100.1
8.0
7.0
6.0
5.0
4.0
3.0
2.0
0
1.0 100.1
1.0
V
CE
= 10 V
5 V
T
J
= 25°C
f
test
= 1 MHz
10 V
V
CE
= 5 V
T
J
= 25°C
f
test
= 1 MHz
NJW21193G (PNP) NJW21194G (NPN)
http://onsemi.com
3
Figure 3. DC Current Gain, V
CE
= 20 V Figure 4. DC Current Gain, V
CE
= 20 V
Figure 5. DC Current Gain, V
CE
= 5 V Figure 6. DC Current Gain, V
CE
= 5 V
h
FE
, DC CURRENT GAIN
I
C
COLLECTOR CURRENT (AMPS)
I
C
COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT GAIN
h
FE
, DC CURRENT GAIN
I
C
COLLECTOR CURRENT (AMPS)
I
C
COLLECTOR CURRENT (AMPS)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Typical Output Characteristics
I
C
, COLLECTOR CURRENT (A)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. Typical Output Characteristics
I
C
, COLLECTOR CURRENT (A)
PNP NJW21193G NPN NJW21194G
h
FE
, DC CURRENT GAIN
TYPICAL CHARACTERISTICS
PNP NJW21193G
PNP NJW21193G
NPN NJW21194G
NPN NJW21194G
1000
100
10
100101.00.1
1000
100
10
100101.00.1
1000
100
10
100101.00.1
1000
100
10
100101.00.1
30
0
25
20
15
10
5.0
0
5.0 10 15 20 25
35
0
30
25
20
15
5.0
0
5.0 10 15 20 25
10
V
CE
= 20 V
T
J
= 100°C
25°C
-25°C
V
CE
= 20 V
T
J
= 100°C
25°C
-25°C
T
J
= 100°C
25°C
-25°C
V
CE
= 5 V
T
J
= 100°C
25°C
-25°C
V
CE
= 20 V
T
J
= 25°C T
J
= 25°C
1.5 A
I
B
= 2 A
1 A
0.5 A
I
B
= 2 A
1.5 A
1 A
0.5 A
P1-P3P4-P6P7-P7

NJW21194G

Mfr. #:
Buy NJW21194G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 200W NPN
Lifecycle:
New from this manufacturer.
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