Philips Semiconductors Product specification
P-channel enhancement mode BSH202
MOS transistor
Fig.1. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25 ˚C
= f(T
a
)
Fig.2. Normalised continuous drain current.
ID% = 100
⋅
I
D
/I
D 25 ˚C
= f(T
a
); conditions: V
GS
≤
-10 V
Fig.3. Safe operating area. T
a
= 25 ˚C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-a
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 ˚C
.
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 ˚C
.
R
DS(ON)
= f(I
D
); parameter V
GS
Normalised Power Dissipation, PD (%)
0
20
40
60
80
100
120
0 25 50 75 100 125 150
Ambient Temperature, Ta (C)
0.1
1
10
100
1000
1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01
Pulse width, tp (s)
Peak Pulsed Drain Current, IDM (A)
single pulse
D = 0.5
0.2
0.1
0.05
0.02
tp
D = tp/T
D
P
T
Normalised Drain Current, ID (%)
0
20
40
60
80
100
120
0 25 50 75 100 125 150
Ambient Temperature, Ta (C)
BSH202
-1.4
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
-2-1.5-1-0.50
Drain-Source Voltage, VDS (V)
Drain current, ID (A)
-2.5 V
-2.9 V
VGS = -10 V
-4.5 V
-2.7 V
Tj = 25 C
-3.1 V
-3.3 V
-3.5 V
BSH202
0.001
0.01
0.1
1
10
0.1 1 10 100
Drain-Source Voltage, VDS (V)
Peak Pulsed Drain Current, IDM (A)
d.c.
100 ms
10 ms
1 ms
RDS(on) = VDS/ ID
tp = 10us
100 us
BSH202
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-1.4-1.2-1-0.8-0.6-0.4-0.20
Drain Current, ID (A)
Drain-Source On Resistance, RDS(on) (Ohms)
VGS = -10 V
-3.3 V
-2.9 V
Tj = 25 C
-3.5 V
-3.1 V
-2.7 V
-2.5 V
-4.5 V
August 1998 3 Rev 1.000
