MC74LVXT4052
www.onsemi.com
3
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
EE
Negative DC Supply Voltage (Referenced to GND) −7.0 to +0.5 V
V
CC
Positive DC Supply Voltage (Referenced to GND)
(Referenced to V
EE
)
−0.5 to +7.0
−0.5 to +7.0
V
V
IS
Analog Input Voltage V
EE
− 0.5 to V
CC
+ 0.5 V
V
IN
Digital Input Voltage (Referenced to GND) −0.5 to 7.0 V
I DC Current, Into or Out of Any Pin ±20 mA
T
STG
Storage Temperature Range −65 to +150
_C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds 260
_C
T
J
Junction Temperature under Bias +150
_C
JA
Thermal Resistance SOIC
TSSOP
143
164
°C/W
P
D
Power Dissipation in Still Air, SOIC
TSSOP
500
450
mW
MSL Moisture Sensitivity Level 1
F
R
Flammability Rating Oxygen Index: 30% − 35% UL 94−V0 @ 0.125 in
V
ESD
ESD Withstand Voltage Human Body Model (Note 1)
Machine Model (Note 2)
Charged Device Model (Note 3)
u2000
u200
u1000
V
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 125°C (Note 4) ±300 mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Tested to EIA/JESD22−A114−A.
2. Tested to EIA/JESD22−A115−A.
3. Tested to JESD22−C101−A.
4. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
EE
Negative DC Supply Voltage (Referenced to GND) −6.0 GND V
V
CC
Positive DC Supply Voltage (Referenced to GND)
(Referenced to V
EE
)
2.5
2.5
6.0
6.0
V
V
IS
Analog Input Voltage V
EE
V
CC
V
V
IN
Digital Input Voltage (Note 5) (Referenced to GND) 0 6.0 V
T
A
Operating Temperature Range, All Package Types −55 125
_C
t
r
, t
f
Input Rise/Fall Time V
CC
= 3.0 V ± 0.3 V
(Channel Select or Enable Inputs) V
CC
= 5.0 V ± 0.5 V
0
0
100
20
ns/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
5. Unused inputs may not be left open. All inputs must be tied to a high−logic voltage level or a low−logic input voltage level.
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature °C
Time, Hours Time, Years
80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4
110 79,600 9.4
120 37,000 4.2
130 17,800 2.0
140 8,900 1.0
1
1 10 100
1000
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 2. Failure Rate vs. Time Junction Temperature
NORMALIZED FAILURE RATE
TIME, YEARS
T
J
= 130_C
T
J
= 120_C
T
J
= 110_C
T
J
= 100_C
T
J
= 90_C
T
J
= 80_C