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STB11NM60T4

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
Electrical characteristics STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1
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2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 250 µA, V
GS
= 0
600 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= 600 V
V
DS
= 600 V, Tc=125°C
1
10
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±30V
±100 nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250µA
345V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 5.5A
0.4 0.45 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
=5.5A
5.2 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
=25V, f=1 MHz, V
GS
=0
1000
230
25
pF
pF
pF
C
oss eq
(2)
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
inceases from 0 to 80% V
DSS
Equivalent output
capacitance
V
GS
=0, V
DS
=0V to 480V 100 pF
R
G
Gate input resistance
f=1 MHz gate DC bias = 0
Test signal level = 20mV
open drain
1.6 Ω
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
=480V, I
D
= 11A
V
GS
=10V
(see Figure 15)
30
10
15
nC
nC
nC
STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 Electrical characteristics
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Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
=300 V, I
D
=5.5A,
R
G
=4.7Ω, V
GS
=10V
(see Figure 17)
20
20
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage rise time
Fall time
Cross-over time
V
DD
=480V, I
D
=11A,
R
G
=4.7Ω, V
GS
=10V
(see Figure 17)
6
11
19
ns
ns
ns
Table 7. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
I
SD
Source-drain current 11 A
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) 44 A
V
SD
(2)
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
I
SD
=11A, V
GS
=0
1.5 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=11A,
di/dt = 100A/µs,
V
DD
=100V, Tj=25°C
(see Figure 16)
390
3.8
19.5
ns
µC
A
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=11A,
di/dt = 100A/µs,
V
DD
=100V, Tj=150°C
(see Figure 16)
570
5.7
20
ns
µC
A
Electrical characteristics STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1
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2.1 Electrical characteristics (curves)
Figure 1. Safe operating area for
TO-220/D
2
PAK /I
2
PAK
Figure 2. Thermal impedance TO-220 /
D
2
PAK /I
2
PAK
Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP
Figure 5. Output characterisics Figure 6. Transfer characteristics
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

STB11NM60T4

Mfr. #:
Buy STB11NM60T4
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 600 Volt 11 Amp
Lifecycle:
New from this manufacturer.
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