SGB02N120
Power Semiconductors
1 Rev. 2_3 Jan 07
Fast IGBT in NPT-technology
• Lower E
off
compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
- SMPS
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Qualified according to JEDEC
1
for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
V
CE
I
C
E
off
T
j
Marking Package
SGB02N120 1200V 2A 0.11mJ
150°C
GB02N120 PG-TO-263-3-2
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
V
CE
1200 V
DC collector current
T
C
= 25°C
T
C
= 100°C
I
C
6.2
2.8
Pulsed collector current, t
p
limited by T
jmax
I
Cpuls
9.6
Turn off safe operating area
V
CE
≤ 1200V, T
j
≤ 150°C
-
9.6
A
Gate-emitter voltage
V
GE
±20
V
Avalanche energy, single pulse
I
C
= 2A, V
CC
= 50V, R
GE
= 25Ω, start at T
j
= 25°C
E
AS
10 mJ
Short circuit withstand time
2
V
GE
= 15V, 100V ≤ V
CC
≤ 1200V, T
j
≤ 150°C
t
SC
10
µs
Power dissipation
T
C
= 25°C
P
tot
62 W
Operating junction and storage temperature
T
j
, T
stg
-55...+150
Soldering temperature (reflow soldering, MSL1)
T
s
245
°C
1
J-STD-020 and JESD-022
2
Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
PG-TO-263-3-2
