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IPS514G

P1-P3P4-P6P7-P9P10-P12
Features
• Over temperature protection (with auto-restart)
• Short-circuit protection (current limit)
• Active clamp
• E.S.D protection
• Status feedback
• Open load detection
• Logic gound isolated from power ground
IPS511G/IPS512G/IPS514G
Data Sheet No.PD60156-J
Description
The IPS511G/IPS512G/IPS514G are fully protected five
terminal high side switches with built in short-circuit,
over-temperature, ESD protection, inductive load ca-
pability and diagnostic feedback. The output current
is controlled when it reaches I
lim
value. The current
limitation is activated until the thermal protection
acts. The over-temperature protection turns off the
high side switch if the junction temperature exceeds
Tshutdown. It will automatically restart after the junc-
tion has cooled 7
o
C below Tshutdown. A diagnostic
pin is provided for status feedback of short-circuit,
over-temperature and open load detection. The double
level shifter circuitry allows large offsets between the
logic ground and the load ground.
Available Package
Product Summary
R
ds(on)
150mΩ (max)
V
clamp
50V
I Limit 5A
V
open load
3V
Typical Connection
FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
8 Lead SOIC
(Single)
IPS511G
16 Lead SOIC
(Dual)
IPS512G
Load
Logic
signal
control
Logic
Logic Gnd
Load Gnd
Vcc
Out
Gnd
In
Dg
+ 5v
Status
feedback
+ VCC
Output pull-up resistor
Rdg
Rin
15K
Truth Table
Op. Conditions
Normal
Normal
Open load
Open load
Over current
Over current
Over-temperature
Over-temperature
In
H
L
H
L
H
L
H
L
Out
H
L
H
H
L
L (cycling)
L
L (limiting)
Dg
H
L
H
H
L
L
L
L
28 Lead SOIC WB
(Quad)
IPS514G
www.irf.com 1
IPS511G/IPS512G/IPS514G
2 www.irf.com
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
Symbol Parameter Min. Typ. Max. Units Test Conditions
R
th1
Thermal resistance with standard footprint —  —
R
th2
Thermal resistance
with 1" square footprint
— &
—
R
th1
Thermal resistance with standard footprint
(2 mos on) (2 mosfets on)
—
85
—
R
th2 (1) Thermal resistance with standard footprint
(1 mos on) (1 mosfet on)
—
100
—
R
th2
Thermal resistance with 1" square footprint
(2 mos on) (2 mosfets on)
— # —
R
th1
Thermal resistance with standard footprint — $
—
R
th2
Thermal resistance with standard footprint
(2 mos on) (2 mosfets on)
— ## —
R
th3
Thermal resistance with standard footprint
(4 mos on) (4 mosfets on)
— # —
R
th1
Thermal resistance with 1" square footprint
— "# —
R
th2
Thermal resistance with 1" square footprint
(2 mos on) (2 mosfets on)
— " —
R
th3
Thermal resistance with 1" square footprint
4 mos on) (4 mosfets on)
— !# —
Thermal Characteristics
8 Lead SOIC
o
C/W
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to GROUND lead. (T
j
= 25
o
C unless otherwise specified).
Symbol Parameter Min. Max. Units Test Conditions
V
out
Maximum output voltage V
cc
-50 V
cc
+0.3
V
offset
Maximum logic ground to load ground offset V
cc
-50 V
cc
+0.3
V
in
Maximum Input voltage -0.3 5.5
I
in, max
Maximum IN current -5 10 mA
V
dg
Maximum diagnostic output voltage -0.3 5.5 V
I
dg, max
Maximum diagnostic output current -1 10 mA
I
sd cont.
Diode max. continuous current
(1)
(IPS511G) — 1.4
(per leg/both legs ON - IPS512G) — 0.8
(per leg/all legs ON - IPS514G) — 0.7
I
sd pulsed
Diode max. pulsed current
(1)
—10
ESD1 Electrostatic discharge voltage (Human Body) — 4 C=100pF, R=1500Ω,
ESD2 Electrostatic discharge voltage (Machine Model) — 0.5 C=200pF, R=0Ω, L=10µH
P
d Maximum power dissipation
(rth=125
o
C/W) IPS511G — 1
(rth=85
o
C/W, both legs on) IPS512G — 1.5
(rth=50
o
C/W, all legs on) IPS514G — 2.5
T
j
max. Max. storage & operating junction temp. -40
+150
Vcc max. Maximum Vcc voltage
—50
V
V
A
kV
o
C
W
16 Lead SOIC
28 Lead SOIC
IPS511G/IPS512G/IPS514G
www.irf.com 3
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter Min. Max. Units
V
cc
Continuous V
cc
voltage
5.5
35
V
IH
High level input voltage 4 5.5
V
IL
Low level input voltage
-0.3 0.9
I
out
Continuous output current
Tamb=85
o
C (
TAmbient = 85
o
C, Tj = 125
o
C, rth = 100
o
C/W) IPS511G — 1.4
I
out
Continuous output current per leg
Tamb=85
o
C (
TAmbient = 85
o
C, Tj = 125
o
C R
th
= 85
o
C/W both legs on) IPS512G — 1.0
I
out
Continuous output current per leg
Tamb=85
o
C (
TAmbient = 85
o
C, Tj = 125
o
C R
th
= 60
o
C/W all legs on) IPS514G — 0.85
Rin Recommended resistor in series with IN pin 4 6
Rdg Recommended resistor in series with DG pin 10
20
V
A
k
Ω
Symbol Parameter Min. Typ. Max. Units Test Conditions
R
ds(on)
ON state resistance T
j
= 25
o
C — 130 150
@Tj=25
o
C
R
ds(on)
ON state resistance @ V
cc
= 6V — 130 150
(V
cc
=6V)
R
ds(on)
ON state resistance Tj = 150
o
C—
220
—
V
in
= 5V, I
out
= 2.5A
@Tj=150
o
C
V
cc oper. Operating voltage range 5.5
—
35
V clamp 1 V
cc
to OUT clamp voltage 1
50 56
—
I
d
= 10mA (see Fig.1 & 2)
V clamp 2
V
cc
to OUT clamp voltage 2 —
58 65
V
f
Body diode forward voltage — 0.9
1.2 I
d
= 2.5A,
V
in
= 0V
I
cc off
Supply current when OFF — 16 50
µAV
in
= 0V,
V
out
= 0V
I
cc on
Supply current when ON — 0.7 2 mA
V
in
= 5V
I
cc ac
Ripple current when ON (AC RMS)
—
20
—
µAV
in
= 5V
V
dgl
Low level diagnostic output voltage — 0.15 0.4 V
I
dg
= 1.6 mA
I
oh
Output leakage current — 60 120
V
out
= 6V
I
ol
Output leakage current 0 — 25
V
out
= 0V
I
dg
leakage
Diagnostic output leakage current
——
10 V
dg
= 5.5V
V
ih
IN high threshold voltage — 2.3 3
V
il
IN low threshold voltage 1 2 —
I
in
,
on
On state IN positive current
—
70
200
µA
V
in
= 5V
In, hyst. Input hysteresis 0.1 0.25 0.5 V
Static Electrical Characteristics
(T
j
= 25
o
C, V
cc
= 14V unless otherwise specified.)
mΩ
V
in
= 5V, I
out
= 2.5A
I
d
= I
sd
(see Fig.1 & 2)
V
V
in
= 5V, I
out
= 1A
µA
V
P1-P3P4-P6P7-P9P10-P12

IPS514G

Mfr. #:
Buy IPS514G
Manufacturer:
Infineon Technologies
Description:
IC SWITCH POWER 50V 5A 28-SOIC
Lifecycle:
New from this manufacturer.
Delivery:
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