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APTGT20TL601G
P1-P3
P4-P6
P7-P7
APTGT20TL601G
APTGT20TL601G – Rev1 October, 2012
www.microsemi
.com
4-7
SP1 Package outline
(d
imen
sion
s in mm
)
See application note 1904 - Mounting Instructions
for SP1 Power Modules
on www.
microsemi.com
Q1 to Q4
Typical performa
nce curve
Ha
r
d
sw
i
tch
in
g
0
20
40
60
80
0
5
10
15
20
25
30
I
C
(A)
Fma
x
,
Oper
a
ti
ng Fr
eque
nc
y
(kH
z)
V
CE
=300V
D
=50%
R
G
=1
2
Ω
T
J
=1
5
0
°
C
T
c
=85
°
C
O
pe
r
ati
ng F
r
e
que
ncy
v
s
Col
l
e
ctor
Curr
e
nt
APTGT20TL601G
APTGT20TL601G – Rev1 October, 2012
www.microsemi
.com
5-7
Output Ch
aracteri
stics (V
GE
=15V)
T
J
=25°C
T
J
=25°C
T
J
=125°C
T
J
=150°C
0
5
10
15
20
25
30
35
40
00
.
511
.
522
.
53
V
CE
(V)
I
C
(A)
Output Character
istics
V
GE
=15V
V
GE
=13V
V
GE
=19V
V
GE
=9V
0
5
10
15
20
25
30
35
40
0
0.5
1
1.5
2
2.5
3
3.5
V
CE
(V)
I
C
(A)
T
J
= 150°C
Transfert Characteristics
T
J
=25°C
T
J
=25°C
T
J
=125°C
T
J
=150°C
0
5
10
15
20
25
30
35
40
5678
9
1
0
1
1
1
2
V
GE
(V)
I
C
(A)
Energy losses vs Coll
ector Current
Eon
Eoff
0
0.25
0.5
0.75
1
1.25
0
1
02
03
04
0
I
C
(A
)
E (mJ)
V
CE
= 300V
V
GE
= 15V
R
G
= 12
Ω
T
J
= 150°C
Eon
Eon
Eoff
0
0.5
1
1.5
10
30
50
70
Gate Resistan
ce (ohms
)
E (mJ)
V
CE
= 300V
V
GE
=15V
I
C
= 20A
T
J
= 150°C
Swi
tching En
ergy
Losses vs Gate Resistance
Reverse Bias Safe Operati
ng Area
0
10
20
30
40
50
0
100
200
300
400
500
600
700
V
CE
(V)
I
C
(A)
V
GE
=15V
T
J
=150°C
R
G
=12
Ω
maximu
m Effective Tran
sient Thermal
Impe
dance, Ju
nction to
Case vs Pul
se Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Puls
e
0
0.4
0.8
1.2
1.6
2
2.4
2.8
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular
Pulse Duration in Sec
onds
Thermal Impedance (°C/W)
APTGT20TL601G
APTGT20TL601G – Rev1 October, 2012
www.microsemi
.com
6-7
CR1 to CR6 Typical performa
nce curve
Energy
losses vs Collector Current
0
0.2
0.4
0.6
0.8
0
1
02
03
04
0
I
F
(A
)
E (mJ)
V
CE
= 300V
R
G
= 12
Ω
T
J
= 150°C
0
0.125
0.25
0.375
0.5
10
30
50
70
Gate Resistance (ohms)
E (mJ)
V
CE
= 300V
I
C
= 20A
T
J
= 150°C
Switching
Energy
Losses vs Gate Resistance
Forward C
hara
cter
istic of
diode
T
J
=25°C
T
J
=150°C
0
5
10
15
20
25
30
35
40
0
0.4
0.8
1.2
1.6
2
2.4
V
F
(V)
I
F
(A)
maximum
Effective Transient Thermal Imp
edance, Junction to Case vs Pulse Dur
ation
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.5
1
1.5
2
2.5
3
3.5
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Durati
on in Seconds
Thermal
Impedance
(°C/W)
P1-P3
P4-P6
P7-P7
APTGT20TL601G
Mfr. #:
Buy APTGT20TL601G
Manufacturer:
Microchip / Microsemi
Description:
IGBT Modules DOR CC8093
Lifecycle:
New from this manufacturer.
Delivery:
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APTGT20TL601G