DMS3015SSS-13 Datasheet DMS3015SSS-13 | P1-P3

DMS3015SSS

Document number: DS32096 Rev. 5 - 3

1 of 7

www.diodes.com

August 2018

DMS3015SSS

NOT RECOMMENDED FOR NEW DESIGN -

NO ALTERNATE PART

N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE

Features

 High Density UMOS with Schottky Barrier Diode

 Low Leakage Current at High Temp.

 High Conversion Efficiency

 Low On-Resistance

 Low Input Capacitance

 Fast Switching Speed

 Utilizes Diodes Incorporated’s Monolithic SiMFET Technology to

Increase Conversion Efficiency

 100% UIS and R

g

Tested

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SO-8

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections: See Diagram Below

 Weight: 0.072 grams (Approximate)

Ordering Information (Note 4)

Part Number

Case

Packaging

DMS3015SSS-13

SO-8

2500 / Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and

Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

Top View

Internal Schematic

S

D

G

D

S

SiMFET

Schottky Integrated MOSFET

Logo

Part no

.

Year: “09” = 2009

Week: 01 ~ 53

1

4

8

5

S3015SS

YY

WW

DMS3015SSS

Document number: DS32096 Rev. 5 - 3

2 of 7

www.diodes.com

August 2018

DMS3015SSS

NOT RECOMMENDED FOR NEW DESIGN -

NO ALTERNATE PART

Maximum Ratings (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

V

DSS

30

V

Gate-Source Voltage

V

GSS

±20

V

Continuous Drain Current (Note 5) V

GS

= 10V

Steady

State

T

A

= +25°C

T

A

= +85°C

I

D

11

6.6

A

Pulsed Drain Current (Note 6)

I

DM

80

A

Avalanche Current (Notes 6 & 7)

I

AR

17

A

Repetitive Avalanche Energy (Notes 6 & 7) L = 0.3mH

E

AR

43

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5)

P

D

1.55

W

Thermal Resistance, Junction to Ambient @T

A

= +25°C (Note 5)

R

θJA

81.3

°C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C

Electrical Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BV

DSS

30

-

V

GS

= 0V, I

D

= 250A

Zero Gate Voltage Drain Current

I

DSS

-

0.1

mA

V

DS

= 30V, V

GS

= 0V

Gate-Source Leakage

I

GSS

-

±100

nA

V

GS

= ±20V, V

DS

= 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

V

GS(TH)

1.0

1.5

2.5

V

DS

= V

GS

, I

D

= 250μA

Static Drain-Source On-Resistance

R

DS(ON)

-

8.5

9.5

11.9

14.9

mΩ

V

GS

= 10V, I

D

= 11A

V

GS

= 4.5V, I

D

= 8.8A

Forward Transfer Admittance

|Y

fs

|

-

18

-

S

V

DS

= 5V, I

D

= 10A

Diode Forward Voltage

V

SD

-

0.45

1

V

GS

= 0V, I

S

= 1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

C

iss

-

1276

-

pF

V

DS

= 15V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

-

160

-

pF

Reverse Transfer Capacitance

C

rss

-

136

-

pF

Gate Resistance

R

g

-

1.48

2.7

Ω

V

DS

= 0V, V

GS

= 0V, f = 1MHz

Total Gate Charge (V

GS

= 4.5V)

Q

g

-

14.3

-

nC

V

DS

= 15V, V

GS

= 4.5V, I

D

= 8.8A

Total Gate Charge (V

GS

= 10V)

Q

g

-

30.6

-

nC

V

DS

= 15V, V

GS

= 10V, I

D

= 8.8A

Gate-Source Charge

Q

gs

-

3.4

-

nC

Gate-Drain Charge

Q

gd

-

4.3

-

nC

Turn-On Delay Time

t

D(ON)

-

15.8

-

ns

V

GS

= 4.5V, V

DS

= 15V,

R

G

= 1.8Ω, I

D

=8.8A

Turn-On Rise Time

t

R

-

27.8

-

ns

Turn-Off Delay Time

t

D(OFF)

-

29.7

-

ns

Turn-Off Fall Time

t

F

-

13.6

-

ns

Notes: 5. Device mounted on 1in * 1in FR-4 PCB with 2oz. Copper. The value in any given application depends on the user’s specific board design.

6. Repetitive rating, pulse width limited by junction temperature.

7. I

AR

and E

AR

ratings are based on low frequency and duty cycles to keep T

J

= +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

DMS3015SSS

Document number: DS32096 Rev. 5 - 3

3 of 7

www.diodes.com

August 2018

DMS3015SSS

NOT RECOMMENDED FOR NEW DESIGN -

NO ALTERNATE PART

0 0.5 1.0 1.5 2.0

Fig. 1 Typical Output Characteristics

-V , DRAIN-SOURCE VOLTAGE (V)

DS

0

5

10

15

30

-I , DRAIN CURRENT (A)

D

20

25

V = -2.0V

GS

V = -2.5V

GS

V = -3.0V

GS

V = -3.5V

GS

V = -4.0V

GS

V = -4.5V

GS

0 5 10 15 20 25 30

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

-I , DRAIN-SOURCE CURRENT (A)

D

0

0.002

0.004

0.006

0.008

0.010

0.012

0.014

0.016

0.018

0.020

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)



-V = 4.5V

GS

-V = 10V

GS

0.5

0.7

0.9

1.1

1.3

1.5

1.7

Fig. 5 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE (

癈

)

J

R , DRAIN-SOURCE

ON-RESISTANCE (NORMALIZED)

DS(ON)

-V = 10V

-I = 10A

GS

D

-V = 4.5V

-I = 5A

GS

D

0

0.002

0.004

0.006

0.008

0.010

0.012

0.014

0.016

0.018

0.020

Fig. 6 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE (

癈

)

J

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)



-V = 10V

-I = 10A

GS

D

-V = 4.5V

-I = 5A

GS

D

0

5

10

15

20

25

30

0

1

2

3

4

Fig. 2 Typical Transfer Characteristics

-V , GATE SOURCE VOLTAGE (V)

GS

-

I

,

D

R

A

I

N

C

U

R

E

N

T

(

A

)

D

V = -5V

DS

T = -55°C

A

T = 25°C

A

T = 125°C

A

T = 150°C

A

T = 85°C

A

-I

D

, DRAIN CURRENT (A)

0

0.002

0.004

0.006

0.008

0.010

0.012

0.014

0.016

0.018

0.020

0

5

10

15

20

25

30

-I , DRAIN CURRENT (A)

Fig. 4 Typical Drain-Source On-Resistance

vs. Drain Current and Temperature

D

R

,

D

R

A

I

N

-

S

O

U

R

C

E

O

N

-

R

E

S

I

S

T

A

N

C

E

(

)

D

S

(

O

N

)



V = 4.5V

GS

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

R

DS(ON)

, DRAIN-SOURCE ON-RESISTANCE ()

(°C)

DMS3015SSS-13

DMS3015SSS-13

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