NCP603
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS (V
in
= 1.750 V, V
out
= 1.250 V (adjustable version)), (V
in
= V
out
+ 0.5 V (fixed version)),
C
in
= C
out
=1.0 mF, for typical values T
A
= 25°C, for min/max values T
A
= −40°C to 125°C, unless otherwise specified.) (Note 10)
Characteristic
Symbol Test Conditions Min Typ Max Unit
Output Noise Voltage (Note 11)
V
n
f = 10 Hz to 100 kHz − 50 −
mV
rms
Output Short Circuit Current
I
sc
350 650 900 mA
Dropout Voltage
1.3 V
1.5 V
1.8 V
2.5 V
2.7 V to 5.0 V
V
DO
Measured at: V
out
– 2.0%
I
out
= 150 mA
−
−
−
−
−
175
150
125
85
75
250
225
175
175
125
mV
Dropout Voltage
1.3 V
1.5 V
1.8 V
2.5 V
2.7 V to 5.0 V
V
DO
Measured at: V
out
– 2.0%
I
out
= 300 mA
−
−
−
−
−
375
350
245
187
157
480
400
340
275
230
mV
Output Current Limit (Note 11)
I
out(max)
300 650 − mA
General
Disable Current I
DIS
ENABLE = 0 V, Vin = 6 V
−40°C ≤ T
A
≤ 85°C
− 0.01 1.0
mA
Ground Current I
GND
ENABLE = 0.9 V,
I
out
= 1.0 mA to 300 mA
− 145 180
mA
Thermal Shutdown Temperature (Note 11) T
SD
− 175 − °C
Thermal Shutdown Hysteresis (Note 11) T
SH
− 10 − °C
ADJ Input Bias Current I
ADJ
−0.75 − 0.75
mA
Chip Enable
ENABLE Input Threshold Voltage
V
th(EN)
V
Voltage Increasing, Logic High 0.9 − −
Voltage Decreasing, Logic Low − − 0.4
Enable Input Bias Current (Note 11) I
EN
− 3.0 100 nA
Timing
Output Turn On Time (Note 11)
1.25 V to 3.5 V
5.0 V
t
EN
ENABLE = 0 V to V
in
−
−
15
30
25
50
ms
10.Performance guaranteed over the indicated operating temperature range by design and/or characterization, production tested at T
J
= T
A
= 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
11. Values based on design and/or characterization.
