STTH212RL

This is information on a product in full production.
February 2015 DocID027546 Rev 1 1/9
9
TN1605H-6FP
High temperature 16 A SCRs
Datasheet
production data
Features
High junction temperature: T
j
= 150 °C
High noise immunity dV/dt = 200 V/µs up to
150 °C
Gate triggering current I
GT
= 6 mA
Blocking voltage V
DRM
/V
RRM
= 600 V
High turn on current rise dI/dt: 100 A/µs
ECOPACK
®
2 compliant component
Complies with UL standards (File ref: E81734)
Insulated package TO-220FPAB:
Insulated voltage: 2000 V
RMS
Applications
Voltage regulator circuits for motorbikes
Inrush current limiting circuits
Motor control circuits and starters
Light dimmers
Solid state relays
Description
Thanks to a junction temperature up to 150 °C
and an insulated TO-220FPAB package, the
TN1605H-6FP offers high thermal performance
up to 16 A rms.
The trade-off between the device's noise
immunity (dV/dt = 200 V/µs), its gate triggering
current (I
GT
= 6 mA) and its turn-on current rise
(dI/dt = 100 A/µs) allows the design of robust and
compact control circuits for voltage regulators in
motorbikes and industrial drives, overvoltage
crowbar protection, motor control circuits in power
tools and kitchen appliances, and inrush current
limiting circuits.
The insulated fullpack package allows a
back-to-back configuration.
.
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Table 1. Device summary
Order code Package V
DRM
/V
RRM
I
GT
TN1605H-6FP TO-220FPAB 600 V 6 mA
www.st.com
Characteristics TN1605H-6FP
2/9 DocID027546 Rev 1
1 Characteristics
Table 2. Absolute ratings
Symbol Parameter Value Unit
I
T(RMS)
On-state rms current (180° conduction angle) T
c
= 83 °C 16 A
I
T(AV)
Average on-state current (180° conduction angle)
T
c
= 83 °C 10
AT
c
= 102 °C 8
T
c
= 117 °C 6
I
TSM
Non repetitive surge peak on-state current
(T
j
initial = 25 °C)
t = 8.3ms 153
A
t = 10 ms 140
I
²
tI
²
t value for fusing (T
j
initial = 25 °C) t
p
= 10 ms 98 A
²
s
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
100 ns, T
j
= 25 °C
f = 60 Hz 100 A/µs
V
DRM
,
V
RRM
Repetitive peak off-state voltage 600 V
I
GM
Peak gate current t
p
= 20 µs T
j
= 150 °C 4 A
P
G(AV)
Average gate power dissipation T
j
= 150 °C 1 W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 150
°C
T
L
Maximum lead temperature for soldering during 10 s 260 °C
V
ins
Insulation rms voltage, 1 minute TO-220FPAB 2000 V
Table 3. Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Symbol Test conditions Value Unit
I
GT
V
D
= 12 V, R
L
= 33 Ω
Min. 3.5
mATyp. 4.5
Max. 6
V
GT
V
D
= 12 V, R
L
= 33 Ω
Max. 1.3 V
V
GD
V
D
= V
DRM
, R
L
= 3.3 kΩ T
j
= 150 °C Min. 0.2 V
I
H
I
T
= 500 mA, gate open Max. 20 mA
I
L
I
G
= 1.2 x I
GT
Max. 40 mA
dV/dt V
D
= 402 V, gate open T
j
= 150 °C Min. 200 V/µs
t
gt
I
T
= 32 A, V
D
= 600 V, I
G
= 100 mA,
(dI
G
/dt)max = 0.2 A/µs
Typ 1.9 µs
t
q
V
D
= 402 V, V
R
= 25 V, I
T
= 16 A,
(dI
G
/dt)max = 30A/µs, dV
D
/dt = 40 V/µs
T
j
= 150 °C Typ 70 µs
DocID027546 Rev 1 3/9
TN1605H-6FP Characteristics
Table 4. Static characteristics
Symbol Test conditions Value Unit
V
TM
I
TM
= 32 A, t
p
= 380 µs T
j
= 25 °C Max. 1.6 V
V
t0
Threshold voltage T
j
= 150 °C Max. 0.82 V
R
d
Dynamic resistance T
j
= 150 °C Max. 25 mΩ
I
DRM,
I
RRM
V
D
= V
DRM,
V
R
= V
RRM
T
j
= 25 °C
Max.
A
T
j
= 150 °C 1.5 mA
Table 5. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case (AC) 4.5 °C/W
R
th(j-a)
Junction to ambient (DC) 60 °C/W
Figure 1. Maximum power dissipation versus
average on-state current
Figure 2. Average and DC on-state current
versus case temperature
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Figure 3. Average and DC on-state current
versus ambient temperature
Figure 4. Relative variation of thermal
impedance versus pulse duration
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STTH212RL

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Rectifiers high voltage diode
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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