TPSMB10AHE3_A/I

TPSMB6.8A thru TPSMB43A
www.vishay.com
Vishay General Semiconductor
Revision: 04-Nov-16
1
Document Number: 88406
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount PAR
®
Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
FEATURES
Junction passivation optimized design
passivated anisotropic rectifier technology
•T
J
= 185 °C capability suitable for high reliability
and automotive requirement
Available in uni-directional polarity only
600 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty cycle): 0.01 %
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
AEC-Q101 qualified
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“X” denotes revision code e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: color band denotes cathode end
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T
A
= 25 °C per fig. 2
(2)
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads at each terminal
(3)
Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum
PRIMARY CHARACTERISTICS
V
BR
6.8 V to 43 V
V
WM
5.8 V to 36.8 V
P
PPM
600 W
I
FSM
75 A
T
J
max. 185 °C
Polarity Uni-directional
Package DO-214AA (SMB)
DO-214AA (SMB)
MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1)
(1)(2)
P
PPM
600 W
Peak pulse current with a 10/1000 μs waveform (fig. 3)
(1)
I
PPM
See table next page A
Peak forward surge current 8.3 ms single half sine-wave
(2)(3)
I
FSM
75 A
Maximum instantaneous forward voltage at 50 A
(2)(3)
V
F
3.5 V
Operating junction and storage temperature range T
J
, T
STG
-65 to +185 °C
TPSMB6.8A thru TPSMB43A
www.vishay.com
Vishay General Semiconductor
Revision: 04-Nov-16
2
Document Number: 88406
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
V
BR
measured after I
T
applied for 300 μs, I
T
= square wave pulse or equivalent
(2)
Surge current waveform per fig. 3 and derated per fig. 2
(3)
All terms and symbols are consistent with ANSI/IEEE C62.35
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
V
BR
(1)
AT I
T
(V)
TEST
CURRENT
I
T
(mA)
STAND-OFF
VOLTAGE
V
WM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
R
(μA)
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
T
J
= 150 °C
I
D
(μA)
MAXIMUM
PEAK
PULSE
SURGE
CURRENT
I
PPM
(2)
(A)
MAXIMUM
CLAMPING
VOLTAGE
AT I
PPM
V
C
(V)
MIN. MAX.
TPSMB6.8A KEP 6.45 7.14 10 5.8 500 1000 57.1 10.5
TPSMB7.5A KGP 7.13 7.88 10 6.4 250 500 53.1 11.3
TPSMB8.2A KKP 7.79 8.61 10 7.02 100 200 49.6 12.1
TPSMB9.1A KMP 8.65 9.55 1 7.78 25 50 44.8 13.4
TPSMB10A KPP 9.5 10.5 1 8.55 5 20 41.4 14.5
TPSMB11A KRP 10.5 11.6 1 9.4 2 5 38.5 15.6
TPSMB12A KTP 11.4 12.6 1 10.2 2 5 35.9 16.7
TPSMB13A KVP 12.4 13.7 1 11.1 2 5 33 18.2
TPSMB15A KXP 14.3 15.8 1 12.8 1 5 28.3 21.2
TPSMB16A KZP 15.2 16.8 1 13.6 1 5 26.7 22.5
TPSMB18A LEP 17.1 18.9 1 15.3 1 5 23.8 25.2
TPSMB20A LGP 19 21 1 17.1 1 5 21.7 27.7
TPSMB22A LKP 20.9 23.1 1 18.8 1 5 19.6 30.6
TPSMB24A LMP 22.8 25.2 1 20.5 1 5 18.1 33.2
TPSMB27A LPP 25.7 28.4 1 23.1 1 5 16 37.5
TPSMB30A LRP 28.5 31.5 1 25.6 1 5 14.5 41.4
TPSMB33A LTP 31.4 34.7 1 28.2 1 5 13.1 45.7
TPSMB36A LVP 34.2 37.8 1 30.8 1 5 12 49.9
TPSMB39A LXP 37.1 41 1 33.3 1 5 11.1 53.9
TPSMB43A LZP 40.9 45.2 1 36.8 1 5 10.1 59.3
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
TPSMB6.8AHE3_A/H
(1)
0.096 H 750 7" diameter plastic tape and reel
TPSMB6.8AHE3_A/I
(1)
0.096 I 3200 13" diameter plastic tape and reel
TPSMB6.8A thru TPSMB43A
www.vishay.com
Vishay General Semiconductor
Revision: 04-Nov-16
3
Document Number: 88406
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C, unless otherwise noted)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 3 - Pulse Waveform
Fig. 4 - Typical Junction Capacitance
Fig. 5 - Maximum Non-Repetitive/Peak Forward Surge Current
0.1
1.0
10
100
Non-Repetitive Pulse
Waveform shown in Fig. 3
T
A
= 25 °C
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms
P
PPM
- Peak Pulse Power (kW)
t
d
- Pulse Width (s)
0 50 100
100
75
50
25
0
150 200
T
J
- Initial Temperature (°C)
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
0
50
100
150
t
r
= 10 µs
Peak Value
I
PPM
Half Value -
I
PPM
I
PP
2
t
d
10/1000 µs Waveform
as defined by R.E.A.
0
1.0
2.0
3.0 4.0
t - Time (ms)
I
PPM
- Peak Pulse Current, % I
RSM
T
J
= 25 °C
Pulse Width (t
d
)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
10
100
1000
10 000
1 10 100
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
V
R
measured
at Zero Bias
V
R
measured at
Stand-Off Voltage, V
WM
V
BR
- Breakdown Voltage (V)
100
10
101
100
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
J
= T
J
max.
8.3 ms Single Half Sine-Wave

TPSMB10AHE3_A/I

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
TVS Diodes / ESD Suppressors 600W,10V 5%,SMB PAR AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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