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4
Document Number: 72107
S09-1261-Rev. D, 13-Jul-09
Vishay Siliconix
DG417B, DG418B, DG419B
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
Temp.
b
Typ.
c
A Suffix
- 55 °C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit Min.
d
Max.
d
Min.
d
Max
d.
Dynamic Characteristics
Source Off Capacitance
e
C
S(off)
f = 1 MHz, V
S
= 0 V
Room
12
pF
Drain Off Capacitance
e
C
D(off)
DG417B
DG418B
Room 12
Channel On Capacitance
e
C
D(on)
f = 1 MHz, V
S
= 0 V
DG417B
DG418B
Room 50
DG419B
Room 57
Power Supplies
Positive Supply Current I+
V+ = 16.5 V, V- = - 16.5 V
V
IN
= 0 or 5 V
Room
Full
0.001 1
5
1
5
µA
Negative Supply Current I-
Room
Full
- 0.001 - 1
- 5
- 1
- 5
Logic Supply Current I
L
Room
Full
0.001 1
5
1
5
Ground Current I
GND
Room
Full
- 0.001 - 1
- 5
- 1
- 5
SPECIFICATIONS
a
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
Temp.
b
Typ.
c
A Suffix
- 55 °C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit Min.
d
Max.
d
Min.
d
Max.
d
Analog Switch
Analog Signal Range
e
V
ANALOG
Full 0 12 0 12 V
Drain-Source
On-Resistance
R
DS(on)
I
S
= - 10 mA, V
D
= 3.8 V
V+ = 10.8 V
Room
Full
26
35
52
35
45
Ω
Dynamic Characteristics
Tur n -On Ti m e t
ON
R
L
= 300 Ω, C
L
= 35 pF
V
S
= 8 V, See Switching
Time Test Circuit
Room
Full
100
125
155
125
143
ns
Turn-Off Time t
OFF
Room
Full
38
66
73
66
69
Break-Before-Make
Time Delay
t
D
R
L
= 300 Ω, C
L
= 35 pF DG419B Room 62 25 25
Transition Time t
TRANS
R
L
= 300 Ω, C
L
= 35 pF
V
S1
= 0 V, 8 V, V
S2
= 8 V, 0 V
Room
Full
95
119
153
119
141
Charge Injection Q C
L
= 10 nF, V
gen
= 0 V, R
gen
= 0 Ω Room 18 pC
Power Supplies
Positive Supply Current I+
V+ = 13.2 V, V
L
= 5.25 V
V
IN
= 0 or 5 V
Room
Full
0.001
1
5
1
5
µA
Negative Supply Current I- Room - 0.001
- 1
- 5
- 1
- 5
Logic Supply Current I
L
Room 0.001
1
5
1
5
Ground Current I
GND
Room - 0.001
- 1
- 5
-1
- 5
SPECIFICATIONS
a
Document Number: 72107
S09-1261-Rev. D, 13-Jul-09
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5
Vishay Siliconix
DG417B, DG418B, DG419B
TYPICAL CHARACTERISTICS T
A
= 25 °C, unless otherwise noted
On-Resistance vs. V
D
and Unipolar Power Supply Voltage
On-Resistance vs. V
D
and Temperature
Leakage vs. Analog Voltage
0
50
100
150
200
250
300
048 12 16 20
V+ = 3 V
V
L
= 3 V
V+ = 5 V
T
A
= 25 °C
V
L
= 5 V
R
DS(on)
- (Ω) e c n a t s i s e R - n O e c r u o S - n i a r D
V
D
- Drain Voltage (V)
V+ = 8 V
V+ = 12 V
V+ = 15 V
V+ = 20 V
5
10
15
20
25
30
- 15 - 10 - 5 0 5 10 15
- 55 °C
V ± = ± 15 V
V
L
= 5 V
25 °C
85 °C
R
DS(on)
- (Ω) e c n a t s i s e R - n O
e
c r u o S
-
n
i
a
r D
V
D
- Drain Voltage (V)
125 °C
- 100
- 80
- 60
- 40
- 20
0
20
40
60
80
100
-15 - 10 - 5 0 5 10 15
V
D
or V
S
- Drain or Source Voltage (V)
V ± = ± 15 V
V
L
= 5 V
T
A
= 25 °C
I
D
I
,
S
)
A
p
(
I
S(off)
I
D(off)
I
D(on)
On-Resistance vs. V
D
and Dual Supply Voltage
On-Resistance vs. V
D
and Temperature
Supply Current vs. Input Switching Frequency
5
10
15
20
25
30
35
40
- 20 - 15 - 10 - 5 0 5 10 15 20
e (Ω)c n a t s i s e R - n O e c r u o S - n i a r R
DS(on)
- D
V
D
- Drain Voltage (V)
T
A
= 25 °C
± 5 V
± 8 V
± 10 V
± 15 V
± 20 V
± 12 V
5
10
15
20
25
30
35
40
45
5
0
02468 10 12
- 55 °C
25 °C
85 °C
R
DS(on)
- (Ω) e c n a t s i s e R - n O
e
c r u o S - n i
a
r D
V
D
- Drain Voltage (V)
125 °C
V+ = 12 V
V- = 0 V
V
L
= 5 V
Input Switchin
g
Frequency (Hz)
10 100 1 K 10 K 100 K 1 M 10 M
100 p
10 n
100 n
1 m
100 m
1 µ
10 µ
100 µ
) A n (
t n e
r r u C
y l
p p u S
+ -
I
10 m
1 n
V ± = ± 15 V
V
L
= 5 V
I
L
I+, I-
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Document Number: 72107
S09-1261-Rev. D, 13-Jul-09
Vishay Siliconix
DG417B, DG418B, DG419B
TYPICAL CHARACTERISTICS T
A
= 25 °C, unless otherwise noted
Switching Time vs. Temperature
Transition Time vs. Temperature
Switching Threshold vs. Supply Voltage
)
s n
(
20
40
60
80
100
120
140
- 55 - 35 - 15 5 25 45 65 85 105 125
t
N O
t ,
F F O
Temperature ( C)
t
OFF
V = 12 V
t
ON
V = ± 15 V
t
ON
V = 12 V
V
L
= 5 V
t
OFF
V = ± 15 V
20
40
60
80
100
120
- 55 - 35 - 15 5 25 45 65 85 105 125
Tem
erature
C
s
n
t
N O
t
,
F
F
O
V+ = 12 V
V- = 0 V
V
L
= 5 V
t
TRANS+
t
TRANS-
0.0
0.5
1.0
1.5
2.0
2.5
3
.
0
468 10 12 14 16 18 20
) V ( d l o h s e r h T g n i h c t
i
w S
V+ - Supply Voltage (V)
V
T
-
V
L
= 5 V
Transition Time vs. Temperature
Insertion Loss, Off -Isolation Crosstalk vs. Frequency
Insertion Loss, Off -Isolation Crosstalk vs. Frequency
20
30
40
50
60
70
80
90
100
- 55 - 35 - 15 5 25 45 65 85 105 125
Tem
p
erature
(
C
)
t
TRANS-
V ± = ± 15 V
V
L
= 5 V
t
TRANS+
)
s n
(
t
N O
t ,
F F O
K L A
T
Frequency (Hz)
) B d ( X
, R
R
I
O
,
s s o
L
- 100
- 90
- 80
- 70
- 60
- 50
- 40
- 30
- 20
- 10
0
10
100K 1M 10M 100M 1G
OIRR
Loss
DG417B
V+ = + 15 V
V- = - 15 V
R
L
= 50 Ω
K
L A T
Frequency (Hz)
) B d ( X , R R I
O
,
s s
o
L
- 100
- 90
- 80
- 70
- 60
- 50
- 40
- 30
- 20
- 10
0
10
100K 1M 10M 100M 1G
Loss
X
TALK
DG419B
V+ = + 15 V
V- = - 15 V
R
L
= 50 Ω
OIRR

DG418BDJ

Mfr. #:
Manufacturer:
Vishay
Description:
Analog Switch ICs Quad Mono CMOS SPST
Lifecycle:
New from this manufacturer.
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