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NTMFS5830NLT1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2012
June, 2012 − Rev. 2
1 Publication Order Number:
NTMFS5830NL/D
NTMFS5830NL
Power MOSFET
40 V, 172 A, 2.3 mW
Features
• Low R
DS(on)
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
40 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
I
D
28
A
T
A
= 70°C 22
Power Dissipation
R
q
JA
(Note 1)
T
A
= 25°C
P
D
3.2
W
T
A
= 70°C 2.0
Continuous Drain
Current R
q
JC
(Note 1)
T
C
= 25°C
I
D
172
A
T
C
= 70°C 138
Power Dissipation
R
q
JC
(Note 1)
T
C
= 25°C
P
D
125
W
T
C
= 70°C 80
Pulsed Drain
Current
t
p
= 10 ms
I
DM
690 A
Operating Junction and Storage Temperature T
J
, T
STG
−55 to
+150
°C
Source Current (Body Diode) I
S
172 A
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L
= 85 A
pk
, L = 0.1 mH, R
G
= 25 W)
EAS 361 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain) (Note 1)
R
q
JC
1.0
°C/W
Junction−to−Ambient Steady State (Note 1)
R
q
JA
39
Junction−to−Ambient Steady State (Note 2)
R
q
JA
73
1. Surface−mounted on FR4 board using 1 sq−in pad
(Cu area = 1.127 in sq [2 oz] inclusing traces).
2. Surface−mounted on FR4 board using 0.155 in sq (100mm
2
) pad size.
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
MARKING
DIAGRAM
http://onsemi.com
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
1
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
40 V
2.3 mW @ 10 V
172 A
3.6 mW @ 4.5 V
G (4)
S (1,2,3)
N−CHANNEL MOSFET
D (5)
Device Package Shipping
†
ORDERING INFORMATION
NTMFS5830NLT1G DFN5
(Pb−Free)
1500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
5830NL
AYWZZ
S
S
S
G
D
D
D
D
NTMFS5830NL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
40 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
T
J
32
mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 40 V
T
J
= 25 °C 1
mA
T
J
= 125°C 100
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20 V ±100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.0 3.0 V
Negative Threshold Temperature Coefficient V
GS(TH)
/T
J
7.2 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V I
D
= 20 A 1.7 2.3
mW
V
GS
= 4.5 V I
D
= 20 A 2.6 3.6
Forward Transconductance g
FS
V
DS
= 5 V, I
D
= 10 A 38 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= 25 V
5880
pF
Output Capacitance C
OSS
750
Reverse Transfer Capacitance C
RSS
500
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 32 V; I
D
= 60 A 113
nC
Threshold Gate Charge Q
G(TH)
V
GS
= 4.5 V, V
DS
= 32 V; I
D
= 60 A
5.5
Gate−to−Source Charge Q
GS
19.5
Gate−to−Drain Charge Q
GD
32
Plateau Voltage V
GP
3.6 V
Gate Resistance R
G
0.5
W
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DS
= 20 V,
I
D
= 10 A, R
G
= 2.5 W
22
ns
Rise Time t
r
32
Turn−Off Delay Time t
d(OFF)
40
Fall Time t
f
27
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 10 A
T
J
= 25°C 0.74 1.0
V
T
J
= 125°C 0.58
Reverse Recovery Time t
RR
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 60 A
41
ns
Charge Time t
a
19
Discharge Time t
b
19
Reverse Recovery Charge Q
RR
33 nC
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTMFS5830NL
http://onsemi.com
3
TYPICAL CHARACTERISTICS
012345
Figure 1. On−Region Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
10 V
4.0 V
5.5 V
4.2 V
T
J
= 25°C
V
GS
= 3.2 V
3.8 V
0
50
100
200
150
0
50
100
200
150
2345
V
DS
≥ 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
Figure 2. Transfer Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
0.000
0.002
0.004
0.006
0.010
246810
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
I
D
= 20 A
T
J
= 25°C
0.0010
0.0020
0.0030
0 25 50 75 100
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
V
GS
= 4.5 V
T
J
= 25°C
V
GS
= 10 V
0.6
0.8
1.0
1.2
1.4
1.6
2.0
−50 −25 0 25 50 75 100 125 150
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
V
GS
= 10 V
I
D
= 20 A
10000
100000
10 20 30 40
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
DSS
, LEAKAGE (nA)
T
J
= 125°C
T
J
= 150°C
V
GS
= 0 V
0.0015
0.0025
0.0035
0 125 150 175
1.8
1000
250
350
300
4.4 V
3.6 V
3.4 V
250
350
300
0.008
P1-P3P4-P6

NTMFS5830NLT1G

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Manufacturer:
ON Semiconductor
Description:
MOSFET SO8FL 40V
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