NTMFS4834NT1G

NTMFS4834N
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES
3.8 V
3.0 V
60
0.003
0
35
2.0
1.0
0
1,000
100,000
021
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
2
15
0
4
Figure 3. OnResistance vs. GatetoSource
Voltage
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAINTOSOURCE RESISTANCE (W)
R
DS(on)
, DRAINTOSOURCE RESISTANCE (W)
Figure 5. OnResistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. DraintoSource Leakage Current
vs. Voltage
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAINTOSOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
50 25025 50 75
23
1612 302
3
V
DS
10 V
T
J
= 25°C
T
J
= 55°C
T
J
= 125°C
V
GS
= 4.5 V
125
V
GS
= 0 V
I
D
= 30 A
V
GS
= 10 V
T
J
= 150°C
46
T
J
= 25°C
20
V
GS
= 5 to 6 V
100
40
615
0.001
20
3.4 V
3.2 V
3.6 V
40
20
200
I
D
= 30 A
T
J
= 25°C
8
V
GS
= 11.5 V
100
T
J
= 25°C
0.002
10
51
10 12
0.004
24
60
80
100
120
140
5
10
20
40 5045
1.5
0.5
T
J
= 125°C
150
30
10,000
8
180
4.0 V
5
25
0.007
0.005
0.006
25 30 55
10
28
160
4.2 V
0
40
20
200
60
80
100
120
140
180
160
4
NTMFS4834N
http://onsemi.com
5
TYPICAL PERFORMANCE CURVES
t
r
t
d(off)
t
d(on)
t
f
V
GS
15 0 10 15
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
Figure 7. Capacitance Variation
3500
0
V
GS
V
DS
55
T
J
= 25°C
C
iss
C
oss
C
rss
C
iss
Figure 8. GateToSource and DrainToSource
Voltage vs. Total Charge
0
4
0
Q
G
, TOTAL GATE CHARGE (nC)
2
8
30
I
D
= 30 A
T
J
= 25°C
Q
T
35
0
V
SD
, SOURCETODRAIN VOLTAGE (VOLTS)
I
S
, SOURCE CURRENT (AMPS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
R
G
, GATE RESISTANCE (W)
1 10 100
1000
t, TIME (ns)
V
GS
= 0 V
Figure 10. Diode Forward Voltage vs. Current
100
0.5 0.6
5
10
15
1
V
DS
= 15 V
I
D
= 15 A
V
GS
= 11.5 V
0.7 0.8
20
30
25
T
J
= 25°C
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1 1 100
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
1000
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
10
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
1 ms
100 ms
10 ms
dc
10 ms
20
1
100
0
25
T
J
, STARTING JUNCTION TEMPERATURE (°C)
I
D
= 32 A
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
50 75
120
100 125
200
560
E
AS
, SINGLE PULSE DRAINTOSOURCE
AVALANCHE ENERGY (mJ)
150
500
40
30
6500
3000
2500
1500
1000
0.4 1.1
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
6
2010 25 504540
Q
gs
320
360
12
75
4500
10
Q
gd
0.1
80
160
240
280
10 25
2000
4000
155
20
18
16
14
12
10
8
6
4
2
0
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
V
DS
10
0.9 1.0
5000
5500
6000
55 60 65 70
400
440
480
520
NTMFS4834N
http://onsemi.com
6
PACKAGE DIMENSIONS
M 3.00 3.40
q 0 −−−
_
3.80
12
_
DFN5 5x6, 1.27P
(SO8FL)
CASE 488AA
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
1234
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1
q
D
E
2
2
B
A
0.20
C
0.20 C
2 X
2 X
DIM MIN NOM
MILLIMETERS
A 0.90 1.00
A1 0.00 −−−
b 0.33 0.41
c 0.23 0.28
D 5.15 BSC
D1 4.50 4.90
D2 3.50 −−−
E 6.15 BSC
E1 5.50 5.80
E2 3.45 −−−
e 1.27 BSC
G 0.51 0.61
K 1.20 1.35
L 0.51 0.61
L1 0.05 0.17
A
0.10 C
0.10 C
DETAIL A
14
L1
e/2
8X
D2
G
E2
K
b
A0.10 BC
0.05
c
L
DETAIL A
A1
e
3 X
c
4 X
C
SEATING
PLANE
MAX
1.10
0.05
0.51
0.33
5.10
4.22
6.10
4.30
0.71
1.50
0.71
0.20
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
M
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.270
2X
0.750
1.000
0.905
0.475
4.530
1.530
4.560
0.495
3.200
1.330
0.965
2X
2X
3X 4X
4X
PIN 5
(EXPOSED PAD)
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTMFS4834NT1G

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MOSFET NFET 30V 130A 3MOHM
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