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IXBT42N300HV

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBT42N300HV
IXBH42N300HV
Fig. 7. Transconductance
0
10
20
30
40
50
60
70
80
0 20 40 60 80 100 120 140 160 180 200
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140 160 180 200
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 1000V
I
C
= 42A
I
G
= 10mA
Fig. 10. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MH
z
C
ies
C
oes
C
res
Fig. 8. Forward Voltage Drop of Intrinsic Diode
0
20
40
60
80
100
120
140
00.511.522.533.5
V
F
- Volts
I
F
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 11. Reverse-Bias Safe Operating Area
0
10
20
30
40
50
60
70
80
90
250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 20Ω
dv / dt < 10V / ns
Fig. 12. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
© 2014 IXYS CORPORATION, All Rights Reserved
IXBT42N300HV
IXBH42N300HV
Fig. 14. Resistive Turn-on Rise Time vs.
Collector Current
250
300
350
400
450
500
550
600
650
40 45 50 55 60 65 70 75 80 85
I
C
- Amperes
t
r
- Nanosecond
s
T
J
= 125ºC
T
J
= 25ºC
R
G
= 20Ω , V
GE
= 15V
V
CE
= 1500V
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
200
400
600
800
1000
1200
1400
1600
1800
20 40 60 80 100 120 140 160 180
R
G
- Ohms
t
r
- Nanosecond
s
40
80
120
160
200
240
280
320
360
t
d
(
on
)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 1500V
I
C
= 84A
I
C
= 42A
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
200
300
400
500
600
700
800
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanosecond
s
380
400
420
440
460
480
500
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 20Ω, V
GE
= 15V
V
CE
= 1500V
I
C
= 42A
I
C
= 84A
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
250
300
350
400
450
500
550
600
650
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanosecond
s
R
G
= 20Ω , V
GE
= 15V
V
CE
= 1500V
I
C
= 84A
I
C
= 42A
Fig. 17. Resistive Turn-off Switching Times vs.
Collector Current
200
300
400
500
600
700
800
40 45 50 55 60 65 70 75 80 85
I
C
- Amperes
t
f
- Nanoseconds
380
400
420
440
460
480
500
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 20Ω, V
GE
= 15V
V
CE
= 1500V
T
J
= 125ºC
T
J
= 25ºC
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
200
300
400
500
600
700
800
900
1000
1100
20 40 60 80 100 120 140 160 180
R
G
- Ohms
t
f i
- Nanosecond
s
0
400
800
1200
1600
2000
2400
2800
3200
3600
t
d(off)
- Nanoseconds
t
f
t
d(off
)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 1500V
I
C
= 84A
I
C
= 42A
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBT42N300HV
IXBH42N300HV
IXYS REF: B_42N300(8M)11-09-12-A
Fig. 19. Forward-Bias Safe Operating Area @ T
C
= 25ºC
0.001
0.01
0.1
1
10
100
1000
1 10 100 1000 10000
V
CE
- Volts
I
C
- Amperes
100µs
1ms
10ms
V
CE(sat)
Limi
t
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
100ms
DC
25µs
Fig. 20. Forward-Bias Safe Operating Area @ T
C
= 115ºC
0.001
0.01
0.1
1
10
100
1000
1 10 100 1000 10000
V
CE
- Volts
I
C
- Amperes
100µs
1ms
10ms
V
CE(sat)
Limi
t
T
J
= 150ºC
T
C
= 115ºC
Single Pulse
100ms
DC
25µs
P1-P3P4-P6

IXBT42N300HV

Mfr. #:
Buy IXBT42N300HV
Manufacturer:
Littelfuse
Description:
IGBT Transistors DISC IGBT BIMSFT-VERYHIVOLT
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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