© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 5
1 Publication Order Number:
MCR12DCM/D
MCR12DCM, MCR12DCN
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control.
Features
• Small Size
• Passivated Die for Reliability and Uniformity
• Low Level Triggering and Holding Characteristics
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
• Pb−Free Packages are Available
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Peak Repetitive Off−State Voltage (Note 1)
(T
J
= −40 to 125°C, Sine Wave, 50 to 60 Hz,
Gate Open) MCR12DCM
MCR12DCN
V
DRM,
V
RRM
600
800
V
On−State RMS Current
(180° Conduction Angles; T
C
= 90°C)
I
T(RMS)
12 A
Average On−State Current
(180° Conduction Angles; T
C
= 90°C)
I
T(AV)
7.8 A
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T
J
= 125°C)
I
TSM
100 A
Circuit Fusing Consideration (t = 8.3 msec) I
2
t 41 A
2
sec
Forward Peak Gate Power
(Pulse Width ≤ 1.0 sec, T
C
= 90°C)
P
GM
5.0 W
Forward Average Gate Power
(t = 8.3 msec, T
C
= 90°C)
P
G(AV)
0.5 W
Forward Peak Gate Current
(Pulse Width ≤ 1.0 sec, T
C
= 90°C)
I
GM
2.0 A
Operating Junction Temperature Range T
J
−40 to 125 °C
Storage Temperature Range T
stg
−40 to 150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
DRM
for all types can be applied on a continuous basis. Ratings apply for zero
or negative gate voltage; positive gate voltage shall not be applied concurrent
with negative potential on the anode. Blocking voltages shall not be tested
with a constant current source such that the voltage ratings of the device are
exceeded.
SCRs
12 AMPERES RMS
600 − 800 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
K
G
A
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4
Anode
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
DPAK
CASE 369C
STYLE 4
MARKING DIAGRAM
Y = Year
WW = Work Week
R12DCx = Device Code
x= M or N
G = Pb−Free Package
1
2
3
4
YWW
R1
2DCxG
