SI6925ADQ-T1-GE3

Vishay Siliconix
Si6925ADQ
Document Number: 72623
S-81056-Rev. B, 12-May-08
www.vishay.com
1
Dual N-Channel 2.5-V (G-S) MOSFET
FEATURES
Halogen-free
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
20
0.045 at V
GS
= 4.5 V
3.9
0.055 at V
GS
= 3.0 V
3.5
0.065 at V
GS
= 2.5 V
3.0
Ordering Information: Si6925ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
1
S
1
S
1
G
1
1
2
3
4
8
7
6
5
D
2
S
2
S
2
G
2
TSSOP-8
Top View
D
1
G
1
S
1
N-Channel MOSFET
D
2
G
2
S
2
N-Channel MOSFET
Notes:
a. Surface Mounted on FR4 board, t 10 s.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
± 12
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
3.9 3.3
A
T
A
= 70 °C
3.1 2.6
Pulsed Drain Current (10 µs Pulse Width)
I
DM
30
Continuous Source Current (Diode Conduction)
a
I
S
1.0 0.72
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
1.13 0.80
W
T
A
= 70 °C
0.72 0.51
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t 10 s
R
thJA
186 110
°C/W
Steady State 125 155
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
65 85
RoHS
COMPLIANT
www.vishay.com
2
Document Number: 72623
S-81056-Rev. B, 12-May-08
Vishay Siliconix
Si6925ADQ
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min.
Typ.
a
Max. Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
0.6 1.8 V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 12 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
1
µA
V
DS
= 20 V, V
GS
= 0 V, T
J
= 70 °C
15
On-State Drain Current
b
I
D(on)
V
DS
5 V, V
GS
= 4.5 V
10 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 4.5 V, I
D
= 3.9 A
0.035 0.045
Ω
V
GS
= 3.0 V, I
D
= 3.5 A
0.042 0.055
V
GS
= 2.5 V, I
D
= 3.0 A
0.050 0.065
Forward Transconductance
b
g
fs
V
DS
= 10 V, I
D
= 3.9 A
14 S
Diode Forward Voltage
b
V
SD
I
S
= 1.0 A, V
GS
= 0 V
0.75 1.1 V
Dynamic
a
Total Gate Charge
Q
g
V
DS
= 6 V, V
GS
= 4.5 V, I
D
= 3.9 A
4.0 6
nCGate-Source Charge
Q
gs
0.9
Gate-Drain Charge
Q
gd
1.0
Gate Resistance
R
g
1.9 Ω
Tur n - On D el ay T im e
t
d(on)
V
DD
= 6 V, R
L
= 6 Ω
I
D
1 A, V
GEN
= 4.5 V, R
g
= 6 Ω
40 60
ns
Rise Time
t
r
50 75
Turn-Off Delay Time
t
d(off)
20 30
Fall Time
t
f
10 20
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.0 A, dI/dt = 100 A/µs
20 40
Output Characteristics
0
5
10
15
20
25
30
012345
V
GS
= 5 thru 3.5 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
3 V
2.5 V
2 V
Transfer Characteristics
0
5
10
15
20
25
30
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
T
C
= 125 °C
- 55 °C
25 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
Document Number: 72623
S-81056-Rev. B, 12-May-08
www.vishay.com
3
Vishay Siliconix
Si6925ADQ
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
- On-Resistance (Ω)R
DS(on)
0.00
0.02
0.04
0.06
0.08
0.10
0 5 10 15 20 25 30
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 2.5 V
V
GS
= 3.0 V
0
1
2
3
4
5
6
012345
V
DS
= 6 V
I
D
= 3.9 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 25 °C
30
10
1
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 150 °C
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
100
200
300
400
500
600
700
048121620
V
DS
- Drain-to-Source Voltage (V)
C
rss
C - Capacitance (pF)
C
oss
C
iss
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 4.5 V
I
D
= 3.9 A
T
J
- Junction Temperature (°C)
(Normalized)
- On-Resistance
DS(on)
R
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
01234
5
I
D
= 3.9 A
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)

SI6925ADQ-T1-GE3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SI6926ADQ-T1-GE3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet