IS31IO7325
Integrated Silicon Solution, Inc. – www.issi.com 5
Rev. C, 01/03/2014
ABSOLUTE MAXIMUM RATINGS
Supply voltage, V
CC
-0.3V ~ +6.0V
SCL, SDA, AD, RSTB, INTB, OD0~OD7 -0.3V ~ +6.0V
PP0~PP7 -0.3V ~ V
CC
+0.3V
PP source output current ±100mA
PP/OD sink current 120mA
SDA sink current 10mA
INTB sink current 10mA
Maximum junction temperature, T
JMAX
150°C
Storage temperature range, T
STG
-65°C ~ +150°C
Operating temperature range, T
A
−40°C ~ +125°C
ESD (HBM)
ESD (CDM)
2kV
1kV
Note:
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only
and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
V
CC
= 2.4V ~ 5.5V, T
A
= -40°C ~ +125°C, unless otherwise noted. Typical values are V
CC
= 3.3V, T
A
= 25°C. (Note 1)
Symbol Parameter Condition Min. Typ. Max. Unit
V
CC
Supply voltage 2.4 5.5 V
V
POR
Power-on-reset voltage
V
CC
falling, T
A
= -40°C 2.35
V
V
CC
falling, T
A
= -20°C 2.3
I
STB
Standby current
(Interface idle)
SCL and SDA and other digital inputs at
V
CC
0.3 1.9 μA
I+
Supply current
(Interface running)
f
SCL
= 400kHz, other digital inputs at V
CC
8 20 μA
V
IH
Input high-voltage
SDA, SCL, AD0, AD1, RSTB,
OD0~OD7, PP0~PP7
1.4 V
V
IL
Input low-voltage
SDA, SCL, AD0, AD1, RSTB,
OD0~OD7, PP0~PP7
0.4 V
I
IH
, I
IL
Input leakage current
SDA, SCL, AD0, AD1, RSTB,
OD0~OD7, PP0~PP7 at VCC or GND
-0.2 +0.2 μA
C
IN
Input capacitance
SDA, SCL, AD0, AD1, RSTB,
OD0~OD7, PP0~PP7 (Note 3)
10 pF
V
OL
Output low voltage
PP0~PP7, OD0~OD7
V
CC
= 2.5V, I
SINK
= 10mA 200
mV
V
CC
= 3.3V, I
SINK
= 15mA 240
V
CC
= 5.0V, I
SINK
= 20mA 250
V
OH
Output high voltage
PP0~PP7
V
CC
= 2.5V, I
SOURCE
= 5mA 2.2
V
V
CC
= 3.3V, I
SOURCE
= 5mA 3.1
V
CC
= 5.0V, I
SOURCE
= 10mA 4.72
V
OLSDA
Output low-voltage SDA I
SINK
= 6mA 180 mV
V
OLINTB
Output low-voltage INTB I
SINK
= 5mA 180 mV