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VS-MBRA140TRPBF

P1-P3P4-P6
VS-MBRA140TRPbF
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-16
1
Document Number: 94301
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 1 A
FEATURES
• Low forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• Small foot print, surface mountable
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-MBRA140TRPbF surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
PRODUCT SUMMARY
Package DO-214AC (SMA)
I
F(AV)
1 A
V
R
40 V
V
F
at I
F
0.49 V
I
RM
26 mA at 125 °C
T
J
max. 150 °C
Diode variation Single die
E
AS
3.0 mJ
Cathode Anode
DO-214AC (SMA)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 1 A
V
RRM
40 V
I
FSM
t
p
= 5 μs sine 120 A
V
F
1.5 A
pk
, T
J
= 125 °C 0.56 V
T
J
Range -55 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBRA140TRPBF UNITS
Maximum DC reverse voltage V
R
40 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 4
I
F(AV)
50 % duty cycle at T
L
= 123 °C, rectangular waveform
On PC board 9 mm
2
island
(0.013 mm thick copper pad area)
1.5
A
50 % duty cycle at T
L
= 132 °C, rectangular waveform
On PC board 9 mm
2
island
(0.013 mm thick copper pad area)
1
Maximum peak one cycle
non-repetitive surge current
See fig. 6
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and with
rated V
RRM
applied
120
A
10 ms sine or 6 ms rect. pulse 30
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 1 A, L = 6 mH 3.0 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
1.0 A
VS-MBRA140TRPbF
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-16
2
Document Number: 94301
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width = 300 μs, duty cycle = 2 %
Note
(1)
thermal runaway condition for a diode on its own heatsink
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
1 A
T
J
= 25 °C
0.54
V
1.5 A 0.62
1 A
T
J
= 125 °C
0.49
1.5 A 0.56
Maximum reverse leakage current
See fig. 2
I
RM
T
J
= 25 °C
V
R
= Rated V
R
0.5
mA
T
J
= 125 °C 26
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.36 V
Forward slope resistance r
t
104 m
Typical junction capacitance C
T
V
R
= 10 V
DC
, T
J
= 25 °C, test signal = 1 MHz 38 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 2.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range
T
J
(1)
, T
Stg
-55 to +150 °C
Maximum thermal resistance,
junction to ambient
R
thJA
DC operation 80 °C/W
Approximate weight
0.07 g
0.002 oz.
Marking device Case style SMA (similar D-64) 1F
dP
tot
dT
J
-------------
1
R
thJA
--------------<
VS-MBRA140TRPbF
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-16
3
Document Number: 94301
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Peak Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Average Forward Current vs.
Allowable Lead Temperature
Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
Fig. 6 - Maximum Peak Surge Forward Current vs.
Pulse Duration
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6); Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
10
1
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward
Current (A)
0.1
0.2 0.4 0.6 0.8 1.6
1.0 1.2
1.4
T
J
= 25 °C
T
J
= 150 °C
T
J
= 125 °C
10
0.01
0.001
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (mA)
0
0.0001
4035
0.1
10 15
25
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
100
5
20 30
100
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
0
10
4010
20 30
35
T
J
= 25 °C
5
15 25
I
F(AV)
- Average Forward Current (A)
Allowable Case Temperature (°C)
80
110
150
0 0.4 0.8 1.2 2.4
70
90
100
120
130
D = 0.20
D = 0.33
D = 0.50
D = 0.75
D = 0.25
DC
See note (1)
Square wave (D = 0.50)
80 % rated V
R
applied
1.6 2.0
140
I
F(AV)
- Average Forward Current (A)
Average Power Loss (W)
0
0.2
0.4
0.6
0.8
0 0.4 0.8
1.2 2.0 2.4
1.0
1.2
1.4
RMS limit
DC
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
1.6
t
p
- Square Wave Pulse Duration (µs)
100
I
FSM
- Non-Repetitive Surge Current (A)
10
100
1000
10 000
10
At any rated load condition and
with rated V
RRM
applied
following surge
P1-P3P4-P6

VS-MBRA140TRPBF

Mfr. #:
Buy VS-MBRA140TRPBF
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 1.0 Amp 40 Volt
Lifecycle:
New from this manufacturer.
Delivery:
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