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IXFH50N60P3

P1-P3P4-P5
© 2012 IXYS CORPORATION, All Rights Reserved
DS100310A(01/12)
IXFT50N60P3
IXFQ50N60P3
IXFH50N60P3
Polar3
TM
HiperFET
TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 600 V
V
DGR
T
J
= 25°C to 150°C, R
GS
= 1MΩ 600 V
V
GSS
Continuous ± 30 V
V
GSM
Transient ± 40 V
I
D25
T
C
= 25°C 50 A
I
DM
T
C
= 25°C, Pulse Width Limited by T
JM
125 A
I
A
T
C
= 25°C25 A
E
AS
T
C
= 25°C1 J
dv/dt I
S
≤ I
DM
, V
DD
≤ V
DSS
, T
J
≤ 150°C 35 V/ns
P
D
T
C
= 25°C 1040 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6mm (0.062in.) from Case for 10s 300 °C
T
sold
Plastic Body for 10 seconds 260 °C
M
d
Mounting Torque (TO-247 & TO-3P) 1.13 / 10 Nm/lb.in.
Weight TO-268 4.0 g
TO-3P 5.5 g
TO-247 6.0 g
V
DSS
= 600V
I
D25
= 50A
R
DS(on)
≤≤
≤≤
≤
145m
ΩΩ
ΩΩ
Ω
Features
z
Fast Intrinsic Rectifier
z
Avalanche Rated
z
Low R
DS(ON)
and Q
G
z
Low Package Inductance
Advantages
z
High Power Density
z
Easy to Mount
z
Space Savings
Applications
z
Switch-Mode and Resonant-Mode
Power Supplies
z
DC-DC Converters
z
Laser Drivers
z
AC and DC Motor Drives
z
Robotics and Servo Controls
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 1mA 600 V
V
GS(th)
V
DS
= V
GS
, I
D
= 4mA 3.0 5.0 V
I
GSS
V
GS
= ±30V, V
DS
= 0V ±100 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 25 μA
T
J
= 125°C 2 mA
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1 145 mΩ
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXFH)
G
S
D (Tab)
D
TO-268 (IXFT)
S
G
D (Tab)
TO-3P (IXFQ)
D
G
S
D (Tab)
Preliminary Technical Information
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFT50N60P3 IXFQ50N60P3
IXFH50N60P3
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 20V, I
D
= 0.5 • I
D25
, Note 1 32 55 S
C
iss
6300 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 630 pF
C
rss
2.5 pF
R
Gi
Gate Input Resistance 1.0 Ω
t
d(on)
31 ns
t
r
20 ns
t
d(off)
62 ns
t
f
17 ns
Q
g(on)
94 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
27 nC
Q
gd
23 nC
R
thJC
0.12 °C/W
R
thCS
(TO-247 & TO-3P) 0.25 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 50 A
I
SM
Repetitive, Pulse Width Limited by T
JM
200 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.4 V
t
rr
250 ns
I
RM
11
A
Q
RM
1.1 μC
I
F
= 25A, -di/dt = 100A/μs
V
R
= 100V, V
GS
= 0V
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 1Ω (External)
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
e
∅ P
TO-247 Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-268 Outline
Terminals: 1 - Gate 2,4 - Drain
3 - Source
TO-3P Outline
© 2012 IXYS CORPORATION, All Rights Reserved
IXFT50N60P3 IXFQ50N60P3
IXFH50N60P3
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
5
10
15
20
25
30
35
40
45
50
01234567
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
5
V
6
V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
90
100
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
6
V
5
V
7
V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
5
10
15
20
25
30
35
40
45
50
024681012141618
V
DS
- Volts
I
D
- Amperes
5
V
6V
4V
V
GS
= 10V
7V
Fig. 4. R
DS(on)
Normalized to I
D
= 25A Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 50A
I
D
= 25A
Fig. 5. R
DS(on)
Normalized to I
D
= 25A Value vs.
Drain Current
0.6
1.0
1.4
1.8
2.2
2.6
3.0
0 102030405060708090100
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
0
10
20
30
40
50
60
-50-250 255075100125150
T
C
- Degrees Centigrade
I
D
- Amperes
P1-P3P4-P5

IXFH50N60P3

Mfr. #:
Buy IXFH50N60P3
Manufacturer:
Littelfuse
Description:
MOSFET 600V 50A 0.145Ohm PolarP3 Power MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
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