TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY SILICON POWER RECTIFIER
Qualified per MIL-PRF-19500/162
• Glass Passivated Die • Glass to Metal Seal Construction
• VRRM 200 to 1000 Volts
T4-LDS-0139 Rev. 1 (091749) Page 1 of 3
DEVICES LEVELS
1N1614 1N4458 1N1614R 1N4458R JAN
1N1615 1N4459 1N1615R 1N4459R JANTX
1N1616 1N1616R
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Peak Repetitive Reverse Voltage
1N1614
1N1615
1N1616
1N4458
1N4459
1N1614R
1N1615R
1N1616R
1N4458R
1N4459R
V
RWM
200
400
600
800
1000
V
Average Forward Current, T
C
= 150° I
F
15 A
Peak Surge Forward Current @ t
p
= 8.3ms, half sinewave,
T
C
= 150°C
I
FSM
100 A
Thermal Resistance, Junction to Case
R
θJC
4.5 °C/W
Operating Case Temperature Range T
j
-65°C to 175°C °C
Storage Temperature Range T
STG
-65°C to 175°C °C
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
Forward Voltage
I
FM
= 15A, T
C
= 25°C*
V
FM
1.5 V
Reverse Current
V
RM
= 200, T
C
= 25°C
V
RM
= 400, T
C
= 25°C
V
RM
= 600, T
C
= 25°C
V
RM
= 800, T
C
= 25°C
V
RM
= 1000, T
C
= 25°C
1N1614
1N1615
1N1616
1N4458
1N4459
1N1614R
1N1615R
1N1616R
1N4458R
1N4459R
I
RM
50
μA
Reverse Current
V
RM
= 200, T
C
= 150°C
V
RM
= 400, T
C
= 150°C
V
RM
= 600, T
C
= 150°C
V
RM
= 800, T
C
= 150°C
V
RM
= 1000, T
C
= 150°C
1N1614
1N1615
1N1616
1N4458
1N4459
1N1614R
1N1615R
1N1616R
1N4458R
1N4459R
I
RM
500
μA
* Pulse test: Pulse width 300 µsec, Duty cycle 2%
Note:
DO-203AA (DO-4)
