November 2007 Rev 8 1/17
17
STB6NK60Z - STB6NK60Z-1
STP6NK60ZFP - STP6NK60Z
N-channel 600 V - 1 - 6 A - TO-220/TO-220FP/D
2
PAK/I
2
PA K
Zener-Protected SuperMESH™ Power MOSFET
Features
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Application
Switching applications
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Figure 1. Internal schematic diagram
Type V
DSS
R
DS(on)
I
D
P
W
STB6NK60Z 600 V < 1.2 6 A 110 W
STB6NK60Z-1 600 V < 1.2 6 A 110 W
STP6NK60ZFP 600 V < 1.2 6 A 30 W
STP6NK60Z 600 V < 1.2 6 A 110 W
1
2
3
TO-220
D²PAK
I²PAK
TO-220FP
1
3
1
2
3
1
2
3
Table 1. Device summary
Order codes Marking Package Packaging
STB6NK60Z B6NK60Z D²PAK Tape & reel
STB6NK60Z-1 B6NK60Z I²PAK Tube
STP6NK60ZFP P6NK60ZFP TO-220FP Tube
STP6NK60Z P6NK60Z TO-220 Tube
www.st.com
Contents STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z
2/17
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z Electrical ratings
3/17
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220/D²/I²PAK TO-220FP
V
DS
Drain-source voltage (V
GS
= 0) 600 V
V
GS
Gate-source voltage ± 30 V
I
D
Drain current (continuous) at T
C
= 25 °C
6
6
(1)
1. Limited only by maximum temperature allowed
A
I
D
Drain current (continuous) at T
C
= 100 °C
3.8
3.8
(1)
A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 24
24
(1)
A
P
TOT
Total dissipation at T
C
= 25 °C
110 30 W
Derating factor 0.88 0.24 W/°C
V
ESD(G-S)
G-S ESD (HBM C=100 pF, R=1.5 kΩ) 3500 V
dv/dt
(3)
3. I
SD
6 A, di/dt 200 A/µs, V
DD
= 80% V
(BR)DSS
Peak diode recovery voltage slope 4.5 V/ns
V
ISO
Insulation withstand voltage (DC) -- 2500 V
T
j
T
stg
Operating junction temperature
Storage temperature
-55 to 150 °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
TO-220/D²/I²PAK TO-220FP
Rthj-case Thermal resistance junction-case max 1.14 4.2 °C/W
Rthj-amb Thermal resistance junction-amb max 62.5 °C/W
T
l
Maximum lead temperature for soldering
purpose
300 °C
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
I
AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
6A
E
AS
Single pulse avalanche energy
(starting T
J
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
210 mJ

STP6NK60Z

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 600 Volt 6 Amp Zener SuperMESH
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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