STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z Electrical ratings
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1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220/D²/I²PAK TO-220FP
V
DS
Drain-source voltage (V
GS
= 0) 600 V
V
GS
Gate-source voltage ± 30 V
I
D
Drain current (continuous) at T
C
= 25 °C
6
6
(1)
1. Limited only by maximum temperature allowed
A
I
D
Drain current (continuous) at T
C
= 100 °C
3.8
3.8
(1)
A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 24
24
(1)
A
P
TOT
Total dissipation at T
C
= 25 °C
110 30 W
Derating factor 0.88 0.24 W/°C
V
ESD(G-S)
G-S ESD (HBM C=100 pF, R=1.5 kΩ) 3500 V
dv/dt
(3)
3. I
SD
≤ 6 A, di/dt ≤ 200 A/µs, V
DD
= 80% V
(BR)DSS
Peak diode recovery voltage slope 4.5 V/ns
V
ISO
Insulation withstand voltage (DC) -- 2500 V
T
j
T
stg
Operating junction temperature
Storage temperature
-55 to 150 °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
TO-220/D²/I²PAK TO-220FP
Rthj-case Thermal resistance junction-case max 1.14 4.2 °C/W
Rthj-amb Thermal resistance junction-amb max 62.5 °C/W
T
l
Maximum lead temperature for soldering
purpose
300 °C
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
I
AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
6A
E
AS
Single pulse avalanche energy
(starting T
J
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
210 mJ