SLVG2.8.TCT

4© 2003 Semtech Corp.
www.semtech.com
PROTECTION PRODUCTS
PROTECTION PRODUCTS
SLVE2.8 and SLVG2.8
Circuit Diagrams
Common Mode Protection (SLVE2.8 and SLVG2.8)
Device Connection
Electronic equipment is susceptible to transient distur-
bances from a variety of sources including: ESD to an
open connector or interface, direct or nearby lightning
strikes to cables and wires, and charged cables “hot
plugged” into I/O ports. The SLV series is designed to
protect sensitive components from damage and latch-
up which may result from such transient events. The
SLVG2.8 is designed to protect one unidirectional line
while the SLVE2.8 is designed to protect one bidirec-
tional line (or two differential lines). The options for
connecting the devices are as follows:
z SLVE2.8: Common mode protection of one bidirec-
tional data line is achieved by connecting the data
line input/output at pins 2 and 3. Pins 1 and 4 are
connected to ground. For differential protection,
pins 1 and 4 can be connected to a second I/O
line. For best results, the ground connection
should be made directly to a ground plane on the
board. The path length should be kept as short as
possible to minimize parasitic inductance.
z SLVG2.8: Common mode protection of one unidi-
rectional line is achieved by connecting the line to
be protected at pins 2 and 3. Pins 1 and 4 are
connected to ground. For best results, the ground
connection should be made directly to a ground
plane on the board. The path length should be
kept as short as possible to minimize parasitic
inductance.
Circuit Board Layout Recommendations for Suppres-
sion of ESD.
Good circuit board layout is critical for the suppression
of ESD induced transients. The following guidelines are
recommended:
z Place the TVS near the input terminals or connec-
tors to restrict transient coupling.
z Minimize the path length between the TVS and the
protected line.
z Minimize all conductive loops including power and
ground loops.
z The ESD transient return path to ground should be
kept as short as possible.
z Never run critical signals near board edges.
z Use ground planes whenever possible.
1
2
3
4
Line
In
Line
Out
1
2
3
4
Line 2
In
Line 2
Out
Line 1
In
Line 1
Out
Differential Mode Protection (SLVE2.8 only)
1
2
3
4
1
2
3
4
SLVG2.8 SLVE2.8
Applications Information
5
© 2003 Semtech Corp.
www.semtech.com
PROTECTION PRODUCTS
SLVE2.8 and SLVG2.8
Applications Information (continued)
IPP
I
SB
I
PT
I
R
V
RWM
VV
PT
V
C
V
BRR
I
BRR
SB
EPD TVS IV Characteristic Curve
EPD TVS
Characteristics
The SLV series is constructed using Semtech’s propri-
etary EPD technology. The structure of the EPD TVS is
vastly different from the traditional pn-junction devices.
At voltages below 5V, high leakage current and junction
capacitance render conventional avalanche technology
impractical for most applications. However, by utilizing
the EPD technology, the SLVE2.8 and SLVG2.8 can
effectively operate at 2.8V while maintaining excellent
electrical characteristics.
The EPD TVS employs a complex nppn structure in
contrast to the pn structure normally found in tradi-
tional silicon-avalanche TVS diodes. The EPD mecha-
nism is achieved by engineering the center region of
the device such that the reverse biased junction does
not avalanche, but will “punch-through” to a conduct-
ing state. This structure results in a device with supe-
rior dc electrical parameters at low voltages while
maintaining the capability to absorb high transient
currents.
The IV characteristic curve of the EPD device is shown
in Figure 1. The device represents a high impedance
to the circuit up to the working voltage (V
RWM
). During a
transient event, the device will begin to conduct as it is
biased in the reverse direction. When the punch-
through voltage (V
PT
) is exceeded, the device enters a
low impedance state, diverting the transient current
away from the protected circuit. When the device is
conducting current, it will exhibit a slight “snap-back” or
negative resistance characteristic due to its structure.
This must be considered when connecting the device
to a power supply rail. To return to a non-conducting
state, the current through the device must fall below
the snap-back current (approximately < 50mA).
6© 2003 Semtech Corp.
www.semtech.com
PROTECTION PRODUCTS
PROTECTION PRODUCTS
SLVE2.8 and SLVG2.8
Land Pattern - SOT-143
Notes:
(1) Controlling dimension: Millimeters.
(2) Dimension A and B do not include mold protrusions.
Mold protrusions are .006” max.
Outline Drawing - SOT-143

SLVG2.8.TCT

Mfr. #:
Manufacturer:
Semtech
Description:
TVS Diodes / ESD Suppressors TVS 2.8V UNI
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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