IRFB4110GPbF
2 www.irf.com
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.033mH
R
G
= 25Ω, I
AS
= 108A, V
GS
=10V. Part not recommended for use
above this value.
S
D
G
I
SD
≤ 75A, di/dt ≤ 630A/µs, V
DD
≤ V
(BR)DSS
, T
J
≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
θ
is measured at T
J
approximately 90°C.
Static @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Volta
e 100 ––– ––– V
∆V
(BR)DSS
∆T
J
Breakdown Volta
e Temp. Coefficient ––– 0.108 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 3.7 4.5
mΩ
V
GS(th)
Gate Threshold Volta
e 2.0 ––– 4.0 V
I
DSS
Drain-to-Source Leaka
e Current ––– ––– 20
––– ––– 250
I
GSS
Gate-to-Source Forward Leaka
e ––– ––– 100
Gate-to-Source Reverse Leaka
e ––– ––– -100
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
fs Forward Transconductance 160 ––– ––– S
Q
g
Total Gate Char
e ––– 150 210
Q
gs
Gate-to-Source Char
e ––– 35 –––
Q
gd
Gate-to-Drain ("Miller") Char
e ––– 43 –––
R
G
Gate Resistance
–––
1.3 ––– Ω
t
d(on)
Turn-On Delay Time ––– 25 –––
t
r
Rise Time ––– 67 –––
t
d(off)
Turn-Off Delay Time ––– 78 –––
t
f
Fall Time ––– 88 –––
C
iss
Input Capacitance ––– 9620 –––
C
oss
Output Capacitance ––– 670 –––
C
rss
Reverse Transfer Capacitance ––– 250 –––
C
oss
eff. (ER)
Effective Output Capacitance (Energy Related)
––– 820 –––
C
oss
eff. (TR)
Effective Output Capacitance (Time Related)
––– 950 –––
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– –––
170
(Body Diode)
I
SM
Pulsed Source Current ––– ––– 670
(Body Diode)
V
SD
Diode Forward Volta
e ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 50 75
T
J
= 25°C V
R
= 85V,
––– 60 90
T
J
= 125°C I
F
= 75A
Q
rr
Reverse Recovery Char
e ––– 94 140
T
J
= 25°C
di
dt = 100A
µs
––– 140 210
T
J
= 125°C
I
RRM
Reverse Recovery Current ––– 3.5 ––– A
T
J
= 25°C
t
on
Forward Turn-On Time Intrinsic turn-on time is ne
li
ible (turn-on is dominated by LS+LD)
µA
nA
ns
nC
A
pF
ns
nC
Conditions
V
DS
= 50V, I
D
= 75A
I
D
= 75A
V
GS
= 20V
V
GS
= -20V
MOSFET symbol
showing the
V
DS
= 50V
Conditions
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 80V
V
GS
= 0V, V
DS
= 0V to 80V
T
J
= 25°C, I
S
= 75A, V
GS
= 0V
integral reverse
p-n junction diode.
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 5mA
V
GS
= 10V, I
D
= 75A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 100V, V
GS
= 0V
V
DS
= 100V, V
GS
= 0V, T
J
= 125°C
I
D
= 75A
R
G
= 2.6Ω
V
GS
= 10V
V
DD
= 65V
