Characteristics STPS3L40
2/9 DocID7128 Rev 4
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.30 x I
F(AV)
+ 0.047 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 40 V
I
F(AV)
Average forward
current
SMC T
L
= 120 °C = 0.5
3A
SMBflat T
L
= 130 °C = 0.5
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 75 A
P
ARM
Repetitive peak avalanche power t
p
= 1 µs Tj = 25 °C 1300 W
T
stg
Storage temperature range -65 to + 175 °C
T
j
Operating junction temperature
(1)
1. condition to avoid thermal runaway for a diode on its own heatsink
150 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-l)
Junction to lead
SMC 18
°C/W
SMBflat 10
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Typ. Max. Unit
I
R
(1)
1. Pulse test: t
p
= 380 µs, < 2%
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
100 µA
T
j
= 125 °C 16 40 mA
V
F
(1)
Forward voltage drop
T
j
= 25 °C
I
F
= 3 A
0.5
V
T
j
= 125 °C 0.40 0.44
T
j
= 25 °C
I
F
= 6 A
0.62
T
j
= 125 °C 0.52 0.58
dPtot
dTj
---------------
1
Rth j a–
--------------------------
