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SFH1690BT-X001

P1-P3P4-P6P7-P8
SFH1690AT, SFH1690BT, SFH1690CT, SFH1690ABT
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 23-May-13
1
Document Number: 83537
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Optocoupler Phototransistor Output, SOP-4,
Mini-Flat Package, 110 °C Rated
DESCRIPTION
The 110 °C rated SFH1690AT, SFH1690BT, SFH1690CT,
and SFH1690ABT family has a GaAs infrared emitting diode
emitter, which is optically coupled to a silicon planar
phototransistor detector, and is incorporated in a 4 pin
100 mil lead pitch miniflat package. It features a high current
transfer ratio, low coupling capacitance, and high isolation
voltage.
The coupling devices are designed for signal transmission
between two electrically separated circuits. The SFH1690
series is available only on tape and reel. There are 2000
parts per reel.
FEATURES
• Operating temperature from - 55 °C to + 110 °C
• SOP (small outline package)
• Isolation test voltage, 3750 V
RMS
(1 s)
• Low saturation voltage
• Fast switching times
• Low coupling capacitance
• End-stackable, 0.100" (2.54 mm) spacing
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
•PLCs
• Telecommunication
AGENCY APPROVALS
• UL1577, file no. E52744 system code U
• cUL - file no. E52744, cUL tested to CSA 22.2 bulletin 5A
• DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5
(pending) available with option 1
• BSI tested to IEC 60065 and IEC 60950-2001
Note
• For additional information on the available options refer to option information.
1
2
4
3
E
C
A
C
i179066
Available
ORDERING INFORMATION
SFH1690##T-X001
PART NUMBER TAPE
AND
REEL
VDE OPTION
AGENCY CERTIFIED/PACKAGE CTR (%)
UL, cUL, BSI 50 to 300 50 to 150 100 to 300 100 to 200
SOP-4, Mini flat SFH1690ABT SFH1690AT SFH1690BT SFH1690CT
VDE, UL, cUL, BSI 50 to 300 50 to 150 100 to 300 100 to 200
SOP-4, Mini flat - - SFH1690BT-X001 -
SOP-4
7.21 mm
SFH1690AT, SFH1690BT, SFH1690CT, SFH1690ABT
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 23-May-13
2
Document Number: 83537
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Fig. 1 - Permissible Power Dissipation vs. Temperature
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
DC forward current I
F
50 mA
Reverse voltage V
R
6V
Surge forward current t
p
≤ 10 μs I
FSM
2.5 A
Power dissipation P
diss
80 mW
Derate linearly from 25 °C 0.7 mW/°C
OUTPUT
Collector emitter voltage V
CEO
70 V
Emitter collector voltage V
ECO
7V
Collector current
I
C
50 mA
t
p
≤ 1 ms I
C
100 mW
Power dissipation P
diss
150 mW
Derate linearly from 25 °C 1.5 mW/°C
COUPLER
Isolation test voltage between emitter
and detector
t = 1 s V
ISO
3750 V
RMS
Operating temperature range T
amb
- 55 to + 110 °C
Storage temperature range T
stg
- 55 to + 150 °C
Soldering temperature
max. 10 s dip soldering distance to
seating plane ≥ 1.5 mm
T
sld
260 °C
0
25
50
75
100
125
150
175
0 20 40 60 80 100 120
T
amb
- Ambient Temperature (°C)
17567
P - Power Dissipation (mW)
tot
Phototransistor
Diode
SFH1690AT, SFH1690BT, SFH1690CT, SFH1690ABT
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 23-May-13
3
Document Number: 83537
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Fig. 2 - Switching Operation (without Saturation)
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 5 mA V
F
1.15 1.4 V
Reverse current V
R
= 6 V I
R
0.01 10 μA
Capacitance V
R
= 0 V, f = 1 MHz C
O
14 pF
OUTPUT
Collector emitter leakage
current
V
CE
= 20 V I
CEO
100 nA
Collector emitter breakdown
voltage
I
C
= 100 μA BV
CEO
70 V
Emitter collector breakdown
voltage
I
E
= - 10 μA BV
ECO
7V
Collector emitter saturation
voltage
I
F
= 10 mA, I
C
= 2.5 mA V
CEsat
0.25 0.4 V
Collector emitter capacitance V
CE
= 5 V, f = 1 MHz C
CE
2.8 pF
COUPLER
Coupling capacitance f = 1 MHz C
C
0.3 pF
Capacitance (input to output) C
IO
0.5 pF
CURRENT TRANSFER RATIO (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
I
C
/I
F
I
F
= 5 mA, V
CE
= 5 V
SFH1690ABT CTR 50 300 %
SFH1690AT CTR 50 150 %
SFH1690BT CTR 100 300 %
SFH1690CT CTR 100 200 %
SWITCHING CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Rise time V
CC
= 5 V, I
C
= 2 mA, R
L
= 100 Ω t
r
3μs
Fall time V
CC
= 5 V, I
C
= 2 mA, R
L
= 100 Ω t
f
4μs
Turn-on time V
CC
= 5 V, I
C
= 2 mA, R
L
= 100 Ω t
on
5μs
Turn-off time V
CC
= 5 V, I
C
= 2 mA, R
L
= 100 Ω t
off
3μs
isfh690at_01
R
L
=100Ω
V
CC
=5V
50 Ω
I
F
P1-P3P4-P6P7-P8

SFH1690BT-X001

Mfr. #:
Buy SFH1690BT-X001
Manufacturer:
Vishay Semiconductors
Description:
Transistor Output Optocouplers Phototransistor 100-300%CTR VDE
Lifecycle:
New from this manufacturer.
Delivery:
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