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SIRA66DP-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P13
Vishay Siliconix
SiRA66DP
Document Number: 62899
S13-1822-Rev. A, 12-Aug-13
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
N-Channel 30 V (D-S) MOSFET
FEATURES
• TrenchFET
®
Gen IV Power MOSFET
•100 % R
g
and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
•
Synchronous Rectification
• High Power Density DC/DC
• VRMs and Embedded DC/DC
• Synchronous Buck Converter
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
g. Package limited.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
() (Max.)
I
D
(A)
a, g
Q
g
(Typ.)
30
0.0023 at V
GS
= 10 V
50
19.2 nC
0.0031 at V
GS
= 4.5 V
50
Ordering Information:
SiRA66DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK
®
SO-8
Bottom View
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
+ 20, - 16
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
50
g
A
T
C
= 70 °C
50
g
T
A
= 25 °C
34.7
b, c
T
A
= 70 °C
27.8
b, c
Pulsed Drain Current (t = 100 µs)
I
DM
150
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
50
g
T
A
= 25 °C
4.5
b, c
Single Pulse Avalanche Current
L =0.1 mH
I
AS
20
Single Pulse Avalanche Energy
E
AS
20
mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
62.5
W
T
C
= 70 °C
40
T
A
= 25 °C
5
b, c
T
A
= 70 °C
3.2
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
d, e
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
b, f
t 10 s
R
thJA
20 25
°C/W
Maximum Junction-to-Case (Drain) Steady State
R
thJC
1.6 2
www.vishay.com
2
Document Number: 62899
S13-1822-Rev. A, 12-Aug-13
Vishay Siliconix
SiRA66DP
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 µA
30 V
V
DS
Temperature Coefficient V
DS
/T
J
I
D
= 250 µA
15
mV/°C
V
GS(th)
Temperature Coefficient V
GS(th)
/T
J
I
D
= 1 mA
- 5.7
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 1 mA
12.2V
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= + 20, - 16 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
1
µA
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
10
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V
40 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 15 A
0.00190 0.00230
V
GS
= 4.5 V, I
D
= 10 A
0.00245 0.00310
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 15 A
120 S
Dynamic
b
Input Capacitance
C
iss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
3014
pFOutput Capacitance
C
oss
1032
Reverse Transfer Capacitance
C
rss
62
C
rss
/C
iss
Ratio
0.0021 0.0042
Total Gate Charge
Q
g
V
DS
= 15 V, V
GS
= 10 V, I
D
= 10 A
44 66
nC
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A
19.2 29
Gate-Source Charge
Q
gs
8
Gate-Drain Charge
Q
gd
2.9
Output Charge
Q
oss
V
DS
= 15 V, V
GS
= 0 V
31.5
Gate Resistance
R
g
f = 1 MHz 0.3 1.45 2.5
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
30 60
ns
Rise Time
t
r
51 100
Turn-Off Delay Time
t
d(off)
28 56
Fall Time
t
f
10 20
Tur n - O n D e l ay T im e
t
d(on)
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
12 24
Rise Time
t
r
10 20
Turn-Off Delay Time
t
d(off)
23 46
Fall Time
t
f
918
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C
50
A
Pulse Diode Forward Current (t = 100 µs)
I
SM
150
Body Diode Voltage
V
SD
I
S
= 5 A
0.72 1.1 V
Body Diode Reverse Recovery Time
t
rr
I
F
= 10 A, dI/dt = 100 A/µs,
T
J
= 25 °C
38 75 ns
Body Diode Reverse Recovery Charge
Q
rr
32 64 nC
Reverse Recovery Fall Time
t
a
18
ns
Reverse Recovery Rise Time
t
b
20
Document Number: 62899
S13-1822-Rev. A, 12-Aug-13
www.vishay.com
3
Vishay Siliconix
SiRA66DP
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
30
60
90
120
150
0.0 0.5 1.0 1.5 2.0 2.5
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 10 V thru 4 V
V
GS
= 2 V
V
GS
= 3 V
0.0015
0.0019
0.0023
0.0027
0.0031
0.0035
0 16 32 48 64 80
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
2
4
6
8
10
0 9 18 27 36 45
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
= 15 V
V
DS
= 20 V
V
DS
= 10 V
I
D
= 10 A
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
30
60
90
120
150
0.0 1.0 2.0 3.0 4.0 5.0
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
0
800
1600
2400
3200
4000
0 5 10 15 20 25 30
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0.7
0.9
1.1
1.3
1.5
1.7
- 50 - 25 0 25 50 75 100 125 150
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
I
D
= 15 A
V
GS
= 10 V
V
GS
= 4.5 V
P1-P3P4-P6P7-P9P10-P12P13-P13

SIRA66DP-T1-GE3

Mfr. #:
Buy SIRA66DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V Vds 20V Vgs PowerPAK SO-8
Lifecycle:
New from this manufacturer.
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