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MSA-2086-TR2G

P1-P3P4-P6P7-P7
MSA-2011, MSA-2086
Silicon Bipolar RFIC Ampliers
Data Sheet
Features
MSA-2011
• Surface Mount SOT-143 Package
• 3 dB Bandwidth: DC to 1.0 GHz
• 16.2 dB Gain at 1 GHz
• 4.3 dB NF at 1 GHz
•
Lead-free Option Available
MSA-2086
• Surface Mount Plastic Microstrip Package
• 3 dB Bandwidth: DC to 1.1 GHz
• 16.6 dB Gain at 1 GHz
• 3.7 dB NF at 1 GHz
•
Lead-free Option Available
Description
The MSA-2011 and MSA-2086 are high performance sili-
con bipolar RFIC ampliers designed to be cascadable in
50 Ω systems. The stability factor of K > 1 contributes to
easy cascading in numerous narrow and broadband IF
and RF commercial and industrial applications.
The MSA-2011 and -2086 are fabricated using a 10 GHz
f
T
, 25 GHz F
MAX
, silicon bipolar RFIC process which utilizes
nitride self-alignment, ion implantation, and gold met-
allization to achieve excellent uniformity, performance,
and reliability. The use of an external bias resistor for
temperature and current stability also allows bias ex-
ibility.
Package options include the industry standard plastic
surface mount SOT-143 package and the 85 mil surface
mountable plastic microstripline package.
MSA-2011
MSA-2086
MSA-2086
Pin Connections and Package Marking
Notes:
Top View. Package Marking provides orientation and identication.
"x" is the date code.
A20x
2
Absolute Maximum Ratings
[1]
Parameter MSA-2011 MSA-2086
Device Current 50 mA 60 mA
Power Dissipation
[2,3]
250 mW
[3a]
325 mW
[3c]
RF Input Power +13 dBm +13 dBm
Junction 150°C 150°C
Temperature
Storage Temperature -65 to 150°C -65 to 150°C
Thermal 500°C/W 115°C/W
Resistance: θ
jc
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25°C.
3a. Derate at 2.0 mW/°C for T
C
> 25°C.
b. Derate at 6.5 mW/°C for T
C
> 149°C.
c. Derate at 8.7 mW/°C for T
C
> 112°C.
Typical Biasing Conguration
Electrical Specications, T
A
= 25°C
I
D
= 32 mA, Z
o
= 50 Ω
MSA-2011 MSA-2086
Parameters and
Symbol Test Conditions Units Min. Typ. Max. Min. Typ. Max.
G
P
Power Gain
(|S
21
|
2
)
f = 0.1 GHz dB 18.9 19.2
f = 0.5 GHz 18.1 18.3
f = 1.0 GHz 15.0 16.2 15.0 16.6
∆G
P
Gain Flatness
f = 0.1 to 0.6 GHz dB ±0.6 ±0.6
f
3dB
3 dB Bandwidth GHz 1.0 1.1
VSWR Input VSWR
f = 0.1 to 3.0 GHz 1.3:1 1.2:1
Output VSWR
f = 0.1 to 3.0 GHz 1.4:1 1.5:1
P
1dB
Power Output @
1 dB Gain
Compression:
f = 1.0 GHz dBm 9.0 9.0
NF 50 Ω Noise Figure
f = 1.0 GHz dB 4.3 3.7
IP
3
Third Order
Intercept
Point
f = 1.0 GHz dBm 22 22
t
d
Group Delay
f = 1.0 GHz psec 143 143
V
D
Device Voltage
T
C
= 25°C V 4.0 5.0 6.0 4.5 5.0 6.3
dV/dT Device Voltage
Temperature mV/°C -9.3 -9.3
Coecient
OUTPUT
R
bias
V 7 V
CC
V = 5 V
d
INPUT
4
1
2
3
R =
bias
I
d
DC BLOCK
RF CHOKE
CC
d
V – V
MSA
3
Gp (dB)
FREQUENCY (GHz)
0.1 1.0 4.0
25
20
5
10
15
-25°C
85
°
C
25°C
-55°C
I (mA)
d
GAIN (dB)
4025 30
13
11
17
15
20
18
12
14
16
19
20 35
0.1 GHz
2.0 GHz
1.0 GHz
0.5 GHz
P (dBm)
1dB
FREQUENCY (GHz)
0.1 1.0 4.0
0
16
14
2
8
10
6
4
12
25 mA
40 mA
35 mA
30 mA
20 mA
NOISE FIGURE (dB)
FREQUENCY (GHz)
0.1 1.0 4.0
3
4
6
5
40 mA
20 mA
P (dBm)
1dB
AMBIENT TEMPERATURE (
°
C)
GAIN (dB)
8525
9
7
17
16
8
10
15
-25
NF
6
4
5
3
NOISE FIGURE (dB)
P
G
1dB
P
-55
°
C
0
0
30
10
20
V (VOLTS)
D
40
1 6 5432
-25
°
C
25
°
C
85
°
C
I mA
D
Typical Performance for MSA-2011
Figure 1. Power Gain vs. Frequency at Four Tempera-
tures, I
D
= 32 mA.
Figure 2. Power Gain vs. Current at 25°C.
Figure 3. Typical P
1dB
vs. Frequency at 25°C.
Figure 4. Noise Figure vs. Frequency at I
D
= 32 mA. Figure 5. Power Gain, Noise Figure, and P
1dB
vs. Tem-
perature at 1 GHz and I
D
= 32 mA.
Figure 6. I
D
vs. V
D
at Four Temperatures.
P1-P3P4-P6P7-P7

MSA-2086-TR2G

Mfr. #:
Buy MSA-2086-TR2G
Manufacturer:
Broadcom / Avago
Description:
IC AMP ISM 0HZ-1GHZ 85 MIL MICRO
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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