105180-HMC408LP3

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 34
LINEAR & POWER AMPLIFIERS - SMT
HMC408LP3 / 408LP3E
GaAs InGaP HBT MMIC 1 WATT
POWER AMPLIFIER, 5.1 - 5.9 GHz
v03.0705
General Description
Features
Functional Diagram
The HMC408LP3 & HMC408LP3E are 5.1 - 5.9 GHz
high efficiency GaAs InGaP Heterojunction Bipolar
Transistor (HBT) Power Ampli er MMICs which offer
+30 dBm P1dB. The ampli er provides 20 dB of gain,
+32.5 dBm of saturated power, and 27% PAE from a
+5V supply voltage. The input is internally matched
to 50 Ohms while the output requires a minimum of
external components. Vpd can be used for full power
down or RF output power/current control. The ampli er
is packaged in a low cost, 3x3 mm leadless surface
mount package with an exposed base for improved
RF and thermal performance.
Gain: 20 dB
Saturated Power: +32.5 dBm @ 27% PAE
Single Supply Voltage: +5V
Power Down Capability
3x3 mm Leadless SMT Package
Electrical Speci cations, T
A
= +25° C, Vs = 5V, Vpd = 5V
Typical Applications
The HMC408LP3 / HMC408LP3E is ideal for:
• 802.11a & HiperLAN WLAN
• UNII & Point-to-Point / Multi-Point Radios
• Access Point Radios
Parameter Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 5.7 - 5.9 5.1 - 5.9 GHz
Gain 17 20 17 20 dB
Gain Variation Over Temperature 0.045 0.055 0.045 0.055 dB/°C
Input Return Loss 8 8 dB
Output Return Loss* 14 6 dB
Output Power for 1 dB Compression
(P1dB)
Icq= 750 mA
Icq= 500 mA
27 30
27
24 27
23
dBm
Saturated Output Power (Psat) 32.5 31 dBm
Output Third Order Intercept (IP3) 40 43 36 39 dBm
Harmonics, Pout= 30 dBm, F= 5.8 GHz
2 fo
3 fo
-50
-90
-50
-90
dBc
dBc
Noise Figure 6 6 dB
Supply Current (Icq) Vpd= 0V/5V 0.002 / 750 0.002 / 750 mA
Control Current (Ipd) Vpd= 5V 14 14 mA
Switching Speed tOn, tOff 50 50 ns
* Output match optimized for 5.7 - 5.9 GHz operation. See Application Circuit herein.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
HMC408* PRODUCT PAGE QUICK LINKS
Last Content Update: 02/23/2017
COMPARABLE PARTS
View a parametric search of comparable parts.
EVALUATION KITS
HMC408LP3 Evaluation Board
DOCUMENTATION
Application Notes
AN-1363: Meeting Biasing Requirements of Externally
Biased RF/Microwave Amplifiers with Active Bias
Controllers
Broadband Biasing of Amplifiers General Application Note
MMIC Amplifier Biasing Procedure Application Note
Thermal Management for Surface Mount Components
General Application Note
Data Sheet
HMC408 Data Sheet
TOOLS AND SIMULATIONS
HMC408 S-Parameter
REFERENCE MATERIALS
Quality Documentation
Package/Assembly Qualification Test Report: 16L 3x3mm
QFN Package (QTR: 11003 REV: 02)
Package/Assembly Qualification Test Report: LP2, LP2C,
LP3, LP3B, LP3C, LP3D, LP3F, LP3G (QTR: 2014-0364)
Package/Assembly Qualification Test Report: Plastic
Encapsulated QFN (QTR: 05006 REV: 02)
Semiconductor Qualification Test Report: GaAs HBT-B
(QTR: 2013-00229)
DESIGN RESOURCES
HMC408 Material Declaration
PCN-PDN Information
Quality And Reliability
Symbols and Footprints
DISCUSSIONS
View all HMC408 EngineerZone Discussions.
SAMPLE AND BUY
Visit the product page to see pricing options.
TECHNICAL SUPPORT
Submit a technical question or find your regional support
number.
DOCUMENT FEEDBACK
Submit feedback for this data sheet.
This page is dynamically generated by Analog Devices, Inc., and inserted into this data sheet. A dynamic change to the content on this page will not
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 35
Input Return Loss vs. Temperature Output Return Loss vs. Temperature*
Broadband Gain & Return Los
s Gain vs. Temperature
P1dB vs. Temperature Psat vs. Temperature
* Output match optimized for 5.7 - 5.9 GHz.
-25
-15
-5
5
15
25
345678
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
-20
-16
-12
-8
-4
0
4.8 5 5.2 5.4 5.6 5.8 6 6.2
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
4.8 5 5.2 5.4 5.6 5.8 6 6.2
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
12
15
18
21
24
27
30
33
36
4.8 5 5.2 5.4 5.6 5.8 6 6.2
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
12
16
20
24
28
32
36
4.8 5 5.2 5.4 5.6 5.8 6 6.2
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
4.8 5 5.2 5.4 5.6 5.8 6 6.2
+25 C
+85 C
-40 C
GAIN (dB)
FREQUENCY (GHz)
HMC408LP3 / 408LP3E
GaAs InGaP HBT MMIC 1 WATT
POWER AMPLIFIER, 5.1 - 5.9 GHz
v03.0705
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D

105180-HMC408LP3

Mfr. #:
Manufacturer:
Analog Devices / Hittite
Description:
RF Development Tools Eval PCB
Lifecycle:
New from this manufacturer.
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