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SBR3U30P1-7

P1-P3P4-P4
SBR3U30P1
3.0A SBR
®
SUPER BARRIER RECTIFIER
PowerDI
®
123
Features
• Ultra Low Forward Voltage Drop
• Superior Reverse Avalanche Capability
• Patented Interlocking Clip Design for High Surge Current
Capacity
• Patented Super Barrier Rectifier Technology
• Soft, Fast Switching Capability
• 150ºC Operating Junction Temperature
• ±16KV ESD Protection (HBM, 3B)
• ±25KV ESD Protection (IEC61000-4-2 Level 4, Air Discharge)
• Lead Free Finish, RoHS Compliant (Note 1)
• “Green” Molding Compound (No Br, Sb)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: PowerDI
®
123
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Polarity Indicator: Cathode Band
• Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.018 grams (approximate)
Top View
Maximum Ratings @T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
RM
30 V
RMS Reverse Voltage
V
R(RMS)
21 V
Average Rectified Output Current (See Figure 1)
I
O
3.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I
FSM
75 A
Non-Repetitive Avalanche Energy
(T
J
= 25°C, I
AS
= 5A, L = 8.5 mH)
E
AS
105 mJ
Repetitive Peak Avalanche Energy
(1µs, 25°C)
P
ARM
1100 W
Thermal Characteristics
Characteristic Symbol Value Unit
Maximum Thermal Resistance
Thermal Resistance Junction to Soldering (Note 2)
Thermal Resistance Junction to Ambient (Note 3)
Thermal Resistance Junction to Ambient (Note 4)
R
θ
JS
R
θ
JA
R
θ
JA
5
178
123
ºC/W
Operating and Storage Temperature Range (Note 5)
T
J
, T
STG
-65 to +150 ºC
Notes: 1. RoHS revision 13.2.2003. High temperature solder exemption applied, see EU Directive Annex Note 7.
2. Theoretical R
θJS
calculated from the top center of the die straight down to the PCB cathode tab solder junction.
3. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf.
4. Polymide PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf
SBR and PowerDI are registered trademark of Diodes Incorporated.
SBR3U30P1
Document number: DS30974 Rev. 6 - 2
1 of 4
www.diodes.com
October 2008
© Diodes Incorporated
SBR3U30P1
Document number: DS30974 Rev. 6 - 2
2 of 4
www.diodes.com
October 2008
© Diodes Incorporated
SBR3U30P1
BR and PowerDI are registered trademark of Diodes Incorporated.
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 5)
V
(BR)R
30 - - V
I
R
= 400µA
Forward Voltage Drop
V
F
-
0.28
0.31
0.39
0.20
0.23
0.35
0.32
0.35
0.43
0.23
0.26
0.38
V
I
F
= 0.5A, T
J
= 25ºC
I
F
= 1.0A, T
J
= 25ºC
I
F
= 3.0A, T
J
= 25ºC
I
F
= 0.5A, T
J
= 125ºC
I
F
= 1.0A, T
J
= 125ºC
I
F
= 3.0A, T
J
= 125ºC
Leakage Current (Note 5)
I
R
-
70
150
6
12
150
400
15
20
µA
µA
mA
mA
V
R
= 5V, T
J
= 25ºC
V
R
= 30V, T
J
= 25ºC
V
R
= 5V, T
J
= 125ºC
V
R
= 30V, T
J
= 125ºC
Notes: 5. Short duration pulse test used to minimize self-heating effect.
Fig. 1 Forward Power Dissipation
0
0.2
0.4
0.6
0.8
1
1.2
0123
I , AVERAGE FORWARD CURRENT (A)
F(AV)
4
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N
(W)
D
Fig. 2 Typical Forward Characteristics
0.1
1
10
100
1,000
10,000
0 0.2 0.4 0.6 0.8
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
I , INSTANTANEOUS FORWARD CURRENT (mA)
F
T=25C
A
°
T= -65C
A
°
T =100 C
A
°
T=150C
A
°
Fig. 3 Typical Reverse Characteristics
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0 5 10 15 20 25 30
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
I , INSTANTANEOUS REVERSE CURRENT (mA)
R
T =100 C
A
°
T =150 C
A
°
T=25C
A
°
T= -65C
A
°
Fig. 4 Total Capacitance vs. Reverse Voltage
1
10
100
1,000
10,000
0 5 10 15 20 25 30
V , DC REVERSE VOLTAGE (V)
R
C , TOTAL CAPACITANCE (pF)
T
f = 1.0MHz
S
SBR3U30P1
Document number: DS30974 Rev. 6 - 2
3 of 4
www.diodes.com
October 2008
© Diodes Incorporated
SBR3U30P1
BR and PowerDI are registered trademark of Diodes Incorporated.
0
1.0
2.0
4.0
3.0
5.0
025
50
75 100
125 150
175 200
I, AVE
R
A
G
E
F
O
R
WA
R
D
C
U
R
R
EN
T
(A)
F(AV)
T , AMBIENT TEMPERATURE (°C)
Fig. 5 Forward Current Derating Curve
A
60
80
70
160
150
140
130
120
110
100
90
0
10
20 30
T
, DE
R
A
T
ED AMBIEN
T
T
EM
P
E
R
A
T
U
R
E (°
C
)
A
V , DC REVERSE VOLTAGE (V)
Fig. 6 Operating Temperature Derating
R
5
15 25
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE ( C)
J
°
P , AVALANCHE PEAK PULSE POWER
DERATING IN PERCENTAGE (%)
ARM
Fig. 7 Pulse Derating Curve
1
10
100
1,000
10,000
0.001 0.01 0.1 1 10 100 1,000
P
, MAXIM
U
M AVALA
N
C
H
E
P
O
WE
R
(W)
ARM
Fig. 8 Maximum Avalanche Power Curve
T , PULSE DURATION (uS)
P
S
P1-P3P4-P4

SBR3U30P1-7

Mfr. #:
Buy SBR3U30P1-7
Manufacturer:
Diodes Incorporated
Description:
Schottky Diodes & Rectifiers 3A 30V Ultralow VF
Lifecycle:
New from this manufacturer.
Delivery:
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