VT60M45C
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Vishay General Semiconductor
Revision: 09-Nov-17
1
Document Number: 87782
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Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.32 V at I
F
= 5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 30 A
V
RRM
45 V
I
FSM
320 A
V
F
at I
F
= 30 A (T
A
= 125 °C) 0.50 V
T
J
max. 175 °C
Package TO-220AB
Diode variations Common cathode
VT60M45C
PIN 1
PIN 2
CASE
PIN 3
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VT60M45C UNIT
Maximum repetitive peak reverse voltage V
RRM
45 V
Maximum average forward rectified current (fig. 1)
per device
I
F(AV)
60
A
per diode 30
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
320
Operating junction and storage temperature range T
J
, T
STG
-40 to +175 °C