DMN25D0UFA-7B Datasheet DMN25D0UFA-7B | P1-P3

DMN25D0UFA

Document number: DS36253 Rev. 1 - 2

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www.diodes.com

February 2014

DMN25D0UFA

25V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(on)

= +25°C

25V

4 @ V

= 4.5V

0.32A

5 @ V

= 2.7V

0.28A

Description

This MOSFET has been designed to minimize the on-state resistance

DS(ON)

) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

Applications

• Load switch

• Portable applications

• Power Management Functions

Features

• 0.4mm ultra low profile package for thin application

• 0.48mm

package footprint, 16 times smaller than SOT23

• Low V

GS(th),

can be driven directly from a battery

• Low R

DS(on)

• ESD Protected Gate (>6kV Human Body Mode)

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X2-DFN0806-3

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.00043 grams (approximate)

Ordering Information (Note 4)

Part Number Compliance Case Packaging

DMN25D0UFA-7B Standard X2-DFN0806-3 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Equivalent Circuit

Bottom View

Top View

Package Pin Configuration

56 = Product Type Marking Code

DMN25D0UFA-7B

Top View

Bar Denotes Gate

and Source Side

X2-DFN0806-3

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain

ESD HBM >6kV

DMN25D0UFA

Document number: DS36253 Rev. 1 - 2

2 of 6

www.diodes.com

February 2014

DMN25D0UFA

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit

Drain-Source Voltage

DSS

Gate-Source Voltage

GSS

Continuous Drain Current, V

= 4.5V

(Note 6)

0.32

= +70°C (Note 6)

0.25

(Note 5)

0.24 A

Pulsed Drain Current (Note 7)

1.2 A

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit

Power Dissipation

(Note 6)

0.63

(Note 5) 0.28

Thermal Resistance, Junction to Ambient

(Note 6)

JA

201

°C/W

(Note 5) 338

Operating and Storage Temperature Range

, T

STG

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

DSS

—

— V

= 0V, I

= 250A

Zero Gate Voltage Drain Current

DSS

—

1 µA

= 20V, V

= 0V

Gate-Source Leakage

GSS

— —

100 nA

= 8V, V

= 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

GS(th)

0.6

—

1.2 V

= V

, I

= 250A

Static Drain-Source On-Resistance

DS(on)

—



= 4.5V, I

= 0.4A

= 2.7V, I

= 0.2A

Forward Transfer Admittance

—

1 - S

= 5V, I

= 0.4A

Diode Forward Voltage

—

0.76 1.2 V

= 0V, I

= 0.29A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

iss

— 27.9 —

= 10V, V

= 0V,

f = 1MHz

Output Capacitance

oss

— 6.1 —

Reverse Transfer Capacitance

rss

— 2 —

Gate Resistance

— 26.4 —



= 0V, V

= 0V, f = 1MHz

Total Gate Charge

— 0.36 —

= 5V, V

= 4.5V,

= 0.2A

Gate-Source Charge

— 0.06 —

Gate-Drain Charge

— 0.04 —

Turn-On Delay Time

D(on)

— 2.9 —

= 6V, V

= 4.5V,

= 0.5A, R

= 50

Turn-On Rise Time

— 1.8 —

Turn-Off Delay Time

D(off)

— 6.6 —

Turn-Off Fall Time

— 2.3 —

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.

7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

DMN25D0UFA

Document number: DS36253 Rev. 1 - 2

3 of 6

www.diodes.com

February 2014

DMN25D0UFA

V , DRAIN-SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristics

I, D

AIN

(A)

0.0

0.1

0.2

0.3

0.4

0.5

0 0.5 1 1.5 2 2.5 3

V= 1.2V

V= 1.5V

V= 2.0V

V= 2.5V

V= 3.0V

V= 8.0V

V= 4.5V

V= 4.0V

V= 3.5V

V , GATE-SOURCE VOLTAGE (V)

Figure 2 Typical Transfer Characteristics

I, D

(A)

0.1

0.2

0.3

0.4

0.5

0 0.5 1 1.5 2 2.5 3

V = 5.0V

T = 150°C

T = 125°C

T = 85°C

T = 25°C

T = -55°C

I , DRAIN-SOURCE CURRENT (A)

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

, D

AIN-S

N-

ESISTANCE ( )

DS(ON)

0.5

0.6

0.7

0.8

0.9

0 0.1 0.2 0.3 0.4 0.5

V = 4.5V

V = 2.7V

V , GATE-SOURCE VOLTAGE (V)

Figure 4 Typical Transfer Characteristics

, D

-S

ESIS

E ( )

DS(ON)

0.6

0.8

1.2

1.4

1.6

1.8

012345678

I = 400mA

I = 200mA

I , DRAIN CURRENT (A)

Figure 5 Typical On-Resistance vs.

Drain Current and Temperature

, D

AIN-S

N-

ESISTANCE ( )

DS(ON)

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

0 0.1 0.2 0.3 0.4 0.5

T = -55°C

T = 25°C

T = 85°C

T = 125°C

T = 150°C

V = 4.5V

T , JUNCTION TEMPERATURE ( C)

Figure 6 On-Resistance Variation with Temperature

, D

AIN-S

ON-RESISTANCE (NORMALIZED)

DS(ON)

0.4

0.8

1.2

1.6

-50 -25 0 25 50 75 100 125 150

V= V

I = 100mA

2.7

V= V

I= 500mA

4.5

P1-P3 P4-P6

DMN25D0UFA-7B

Mfr. #:

Buy DMN25D0UFA-7B

Manufacturer:

Diodes Incorporated

Description:

MOSFET 25V N-Ch ENH FET 25Vds 8Vgs 0.63W

Lifecycle:

New from this manufacturer.

Delivery:

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