BUK9Y58-75B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 7 April 2010 3 of 14
NXP Semiconductors
BUK9Y58-75B
N-channel TrenchMOS logic level FET
4. Limiting values
[1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[2] Repetitive avalanche rating limited by average junction temperature of 170 °C.
[3] Refer to application note AN10273 for further information.
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175°C --75V
V
DGR
drain-gate voltage R
GS
=20kΩ; T
mb
≥ 25 °C;
T
mb
≤ 175 °C
--75V
V
GS
gate-source voltage -15 - 15 V
I
D
drain current T
mb
=25°C; V
GS
=5V; see Figure 1;
see Figure 4
- - 20.73 A
T
mb
=100°C; V
GS
=5V; see Figure 1 - - 14.66 A
I
DM
peak drain current T
mb
=25°C; t
p
≤ 10 µs; pulsed;
see Figure 4
- - 82.9 A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 - - 60.4 W
T
stg
storage temperature -55 - 175 °C
T
j
junction temperature -55 - 175 °C
Source-drain diode
I
S
source current T
mb
= 25 °C - - 20.73 A
I
SM
peak source current t
p
≤ 10 µs; pulsed; T
mb
= 25 °C - - 82.9 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
= 20.73 A; V
sup
≤ 75 V; R
GS
=50Ω;
V
GS
=5V; T
j(init)
= 25 °C; unclamped
--34mJ
E
DS(AL)R
repetitive drain-source
avalanche energy
see Figure 3
[1][2][3]
---J
