NXP Semiconductors Product specification
Silicon PIN diode BAP1321-02
ELECTRICAL CHARACTERISTICS
T
j
= 25°C unless otherwise specified.
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
F
forward voltage I
F
= 50 mA 0.95 1.1 V
I
R
reverse leakage current V
R
=60V − 100 nA
C
d
diode capacitance V
R
= 0; f = 1 MHz 0.4 − pF
V
R
= 1 V; f = 1 MHz 0.35 0.45 pF
V
R
= 20 V; f = 1 MHz 0.25 0.32 pF
r
D
diode forward resistance f = 100 MHz; note 1
I
F
= 0.5 mA 3.4 5.0 Ω
I
F
= 1 mA 2.4 3.6 Ω
I
F
= 10 mA 1.2 1.8 Ω
I
F
= 100 mA 0.85 1.3 Ω
|s
21
|
2
isolation V
R
= 0; f = 900 MHz 16.3 − dB
V
R
= 0; f = 1800 MHz 11.4 − dB
V
R
= 0; f = 2450 MHz 9.2 − dB
|s
21
|
2
insertion loss I
F
= 0.5 mA; f = 900 MHz 0.23 − dB
I
F
= 0.5 mA; f = 1800 MHz 0.27 − dB
I
F
= 0.5 mA; f = 2450 MHz 0.33 − dB
|s
21
|
2
insertion loss I
F
= 1 mA; f = 900 MHz 0.18 − dB
I
F
= 1 mA; f = 1800 MHz 0.22 − dB
I
F
= 1 mA; f = 2450 MHz 0.27 − dB
|s
21
|
2
insertion loss I
F
= 10 mA; f = 900 MHz 0.10 − dB
I
F
= 10 mA; f = 1800 MHz 0.16 − dB
I
F
= 10 mA; f = 2450 MHz 0.20 − dB
|s
21
|
2
insertion loss I
F
= 100 mA; f = 900 MHz 0.08 − dB
I
F
= 100 mA; f = 1800 MHz 0.13 − dB
I
F
= 100 mA; f = 2450 MHz 0.18 − dB
τ
L
charge carrier life time when switched from I
F
= 10 mA to I
R
= 6 mA;
R
L
= 100 Ω; measured at I
R
=3mA
0.5 −µs
L
S
series inductance I
F
= 100 mA; f = 100 MHz 0.6 − nH
SYMBOL PARAMETER VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point 85 K/W
