®
TMMBAT 41
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
General purpose metal to silicon diode featuring
very low turn-on voltage and fast switching.
This device has integrated protection against ex-
cessive voltage such as electrostatic discharges.
August 1999 Ed: 1A
MINIMELF
(Glass)
Symbol Parameter Value Unit
V
RRM
Repetitive Peak Reverse Voltage 100 V
I
F
Forward Continuous Current
T
i
= 25
°
C
100 mA
I
FRM
Repetitive Peak Forward Current t
p
≤
1s
δ ≤
0.5
350 mA
I
FSM
Surge non Repetitive Forward Current t
p
= 10ms 750 mA
P
tot
Power Dissipation
T
i
= 95
°
C
100 mW
T
stg
T
j
Storage and Junction Temperature Range - 65 to + 150
- 65 to + 125
°
C
°
C
T
L
Maximum Temperature for Soldering during 15s 260
°
C
ABSOLUTE RATINGS
(limiting values)
Symbol Test Conditions Value Unit
R
th(j-l)
Junction-leads 300
°
C/W
THERMAL RESISTANCE
* Pulse test: t
p
≤
300
µ
s
δ
<
2%
.
Symbol Test Conditions Min. Typ. Max. Unit
V
BR
T
j
= 25
°
CI
R
= 100
µ
A
100 V
V
F
*
T
j
= 25
°
CI
F
= 1mA
0.4 0.45 V
T
j
= 25
°
C I
F
= 200mA
1
I
R
*
T
j
= 25
°
C
V
R
= 50V 0.1
µ
A
T
j
= 100
°
C
20
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
C
T
j
= 25
°
CV
R
= 1V f = 1MHz
2pF
DYNAMIC CHARACTERISTICS
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