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BYW99P-200

P1-P3P4-P6
BYW99P/PI/W
®
October 1999 Ed : 2A
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
SOT93
(Plastic)
BYW99P-200
SUITED FOR SMPS
VERY LOW FORWARD LOSSES
NEGLIGIBLE SWITCHING LOSSES
HIGH SURGE CURRENT CAPABILITY
HIGH AVALANCHE ENERGY CAPABILITY
INSULATED VERSION TOP3I :
Insulating voltage = 2500 V DC
Capacitance = 12 pF
DESCRIPTION
FEATURES
Dual center tap rectifier suited for switchmode
power supply and high frequency DC to DC
converters.
Packaged in SOT93, TOP3I or TO247 this device
is intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
isolated
TOP3I
(Plastic)
BYW99PI-200
Symbol Parameter Value Unit
I
F(RMS)
RMS forward current
Per diode
35 A
I
F(AV)
Average forward current
δ
= 0.5
SOT93 / TO247 Tc=120°C Per diode
15 A
TOP3I Tc=115°C Per diode
15
I
FSM
Surge non repetitive forward current
tp=10ms
sinusoidal
Per diode
200 A
Tstg
Tj
Storage and junction temperature range
- 40 to + 150
- 40 to + 150
°
C
°
C
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage
200 V
A1
K
A2
TO247
(Plastic)
BYW99W-200
A1
K
A2
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Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
Symbol Test Conditions Min. Typ. Max. Unit
I
R
*
T
j
= 25
°
CV
R
= V
RRM
20
µ
A
T
j
= 100
°
C
1.5 mA
V
F **
T
j
= 125
°
CI
F
= 12 A
0.85 V
T
j
= 125
°
CI
F
= 25 A
1.05
T
j
= 25
°
CI
F
= 25 A
1.15
Pulse test : * tp = 5 ms, δ < 2 %
** tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation :
P = 0.65 x I
F(AV)
+ 0.016 x I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS
(Per diode)
Symbol Test Conditions Min. Typ. Max. Unit
trr T
j
= 25
°
CI
F
= 0.5A
I
R
= 1A
Irr = 0.25A 25 ns
I
F
= 1A
V
R
= 30V
dI
F
/dt = -50A/
µ
s40
tfr T
j
= 25
°
CI
F
= 1A
V
FR
= 1.1 x V
F
tr = 10 ns 15 ns
V
FP
T
j
= 25
°
CI
F
= 1A tr = 10 ns 2 V
RECOVERY CHARACTERISTICS
Symbol Parameter Value Unit
Rth (j-c)
Junction to case
SOT93 / TO247 Per diode
1.8
°
C/W
Total
1.0
TOP3I Per diode
2.0
Total
1.25
Rth (c)
Coupling
SOT93 / TO247
0.2
°
C/W
TOP3I
0.5
When the diodes 1 and 2 are used simultaneously :
Tj-Tc (diode 1) = P(diode 1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
THERMAL RESISTANCES
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0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
0
50
100
150
200
250
300
350
P=10W
P=20W
P=30W
T
I
M
=tp/T
tp
I
M(A)
Fig.2 :
Peak current versus form factor.
0.1 1 10 100 200
Tj=125 C
o
IFM(A)
VFM(V)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Fig.3 :
Forward voltage drop versus forward
current (maximum values).
0.1
1.0
0.2
0.5
Zth(j-c) (tp. )
K=
Rth(j-c)
=0.5
=0.2
=0.1
Single pulse
tp(s)
T
=tp/T
tp
1.0E-03 1.0E-02 1.0E-01
1.0E+00
K
Fig.4 :
Relative variation of thermal impedance
junction to case versus pulse duration.
0 2.5 5 7.5 10 12.5 15 17.5 20
0
2.5
5
7.5
10
12.5
15
17.5
20
=0.05
=0.1
=0.2
=0.5
T
=tp/T
tp
I
F(av)(A)
P
F(av)(W)
=1
Fig.1 :
Average forward power dissipation versus
average forward current.
0.001 0.01 0.1 1
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
IM
t
=0.5
t(s)
I
M(A)
Tc=25 C
o
Tc=60 C
o
Tc=115 C
o
Fig.6 :
Non repetitive surge peak forward current
versus overload duration.
(TOP3I)
0.001 0.01 0.1 1
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
IM
t
=0.5
t(s)
I
M(A)
Tc=25 C
o
Tc=75 C
o
Tc=120 C
o
Fig.5 :
Non repetitive surge peak forward current
versus overload duration.
(SOT93, TO247)
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P1-P3P4-P6

BYW99P-200

Mfr. #:
Buy BYW99P-200
Manufacturer:
STMicroelectronics
Description:
Rectifiers 15 Amp 200 Volt
Lifecycle:
New from this manufacturer.
Delivery:
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