BCX71JLT1G Datasheet BCX71JLT1G | P1-P3

August, 2009 − Rev. 3

1 Publication Order Number:

BCX71J/D

BCX71JLT1G

General Purpose Transistor

PNP Silicon

Features

• Moisture Sensitivity Level: 1

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter Voltage V

CEO

−45 Vdc

Collector − Base Voltage V

CBO

−45 Vdc

Emitter − Base Voltage V

EBO

−5.0 Vdc

Collector Current − Continuous I

C

−100 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation (Note 1)

T

A

= 25°C

Derate above 25°C

P

D

350

2.8

mW

mW/°C

Storage Temperature T

stg

150 °C

Thermal Resistance,

Junction-to-Ambient (Note 1)

R



JA

357 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Package mounted on 99.5% alumina 10 X 8 X 0.6 mm.

SOT−23

CASE 318

STYLE 6

MARKING DIAGRAM

1

3

2

Device Package Shipping

†

ORDERING INFORMATION

COLLECTOR

3

1

BASE

2

EMITTER

http://onsemi.com

BCX71JLT1G SOT−23

(Pb−free)

3000/Tape & Reel

BJ = Device Code

M = Date Code*

G = Pb−Free Package

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

(Note: Microdot may be in either location)

BJ M G

G

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

BCX71JLT1G

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(I

C

= 2.0 mAdc, I

B

= 0)

V

(BR)CEO

−45 −

Vdc

Collector−Base Breakdown Voltage

(I

E

= 1.0 Adc, I

E

= 0)

V

(BR)EBO

−5.0 −

Vdc

Collector Cutoff Current

(V

CE

= 32 Vdc)

(V

CE

= 32 Vdc, T

A

= 150°C)

I

CES

−

−20

nAdc

Adc

ON CHARACTERISTICS

DC Current Gain

(I

C

= 10 Adc, V

CE

= 5.0 Vdc)

(I

C

= 2.0 mAdc, V

CE

= 5.0 Vdc)

(I

C

= 50 mAdc, V

CE

= 1.0 Vdc)

(I

C

= 2.0 mAdc, V

CE

= 5.0 Vdc, f = 1.0 kHz)

h

FE

40

250

100

250

−

460

−

500

−

Collector−Emitter Saturation Voltage

(I

C

= 10 mAdc, I

B

= 0.25 mAdc)

(I

C

= 50 mAdc, I

B

= 1.25 mAdc)

V

CE(sat)

−

−0.25

−0.55

Vdc

Base−Emitter Saturation Voltage

(I

C

= 1.0 mAdc, V

CE

= 5.0 Vdc)

(I

C

= 10 mAdc, V

CE

= 5.0 Vdc)

V

BE(sat)

−0.6

−0.68

−0.85

−1.05

Vdc

Base−Emitter On Voltage

(I

C

= 2.0 mAdc, V

CE

= 5.0 Vdc)

V

BE(on)

−0.6 −0.75

Vdc

Output Capacitance

(V

CE

= 10 Vdc, I

C

= 0, f = 1.0 MHz)

C

obo

− 6.0

pF

Noise Figure

(I

C

= 0.2 mAdc, V

CE

= 5.0 Vdc, R

S

= 2.0 k, f = 1.0 kHz, BW = 200 Hz)

NF

− 6.0

dB

SWITCHING CHARACTERISTICS

Turn−On Time

(I

C

= 10 mAdc, I

B1

= 1.0 mAdc)

t

on

− 150

ns

Turn−Off Time

(I

B2

= 1.0 mAdc, V

BB

= 3.6 Vdc, R1 = R2 = 5.0 k, R

L

= 990 )

t

off

− 800

ns

TYPICAL NOISE CHARACTERISTICS

(V

CE

= − 5.0 Vdc, T

A

= 25°C)

Figure 1. Noise Voltage

f, FREQUENCY (Hz)

5.0

7.0

10

3.0

Figure 2. Noise Current

f, FREQUENCY (Hz)

1.0

10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k

1.0

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.1

I

C

= 10 A

100 A

e

n

, NOISE VOLTAGE (nV)

I

n

, NOISE CURRENT (pA)

30 A

BANDWIDTH = 1.0 Hz

R

S

≈∞

I

C

= 1.0 mA

300 A

100 A

30 A

10 A

10 20 50 100 200 500 1.0k 2.0k 5.0k 10k

2.0

1.0 mA

0.2

300 A

BANDWIDTH = 1.0 Hz

R

S

≈ 0

BCX71JLT1G

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3

NOISE FIGURE CONTOURS

(V

CE

= − 5.0 Vdc, T

A

= 25°C)

500k

100

200

500

1.0k

10k

5.0k

20k

50k

100k

200k

2.0k

1.0M

500k

100

200

500

1.0k

10k

5.0k

20k

50k

100k

200k

2.0k

1.0M

Figure 3. Narrow Band, 100 Hz

I

C

, COLLECTOR CURRENT (A)

Figure 4. Narrow Band, 1.0 kHz

I

C

, COLLECTOR CURRENT (A)

10

0.5 dB

BANDWIDTH = 1.0 Hz

R

S

, SOURCE RESISTANCE (OHMS)

R

S

, SOURCE RESISTANCE (OHMS)

Figure 5. Wideband

I

C

, COLLECTOR CURRENT (A)

10

10 Hz to 15.7 kHz

R

S

, SOURCE RESISTANCE (OHMS)

Noise Figure is Defined as:

NF + 20 log

10

ƪ

e

n

2

) 4KTR

S

) I

n

2

R

S

2

4KTR

S

ƫ

1ń2

= Noise Voltage of the Transistor referred to the input. (Figure 3)

= Noise Current of the Transistor referred to the input. (Figure 4)

= Boltzman’s Constant (1.38 x 10

−23

j/°K)

= Temperature of the Source Resistance (°K)

= Source Resistance (Ohms)

e

n

I

n

K

T

R

S

1.0 dB

2.0 dB

3.0 dB

20 30 50 70 100 200 300 500 700 1.0k 10 20 30 50 70 100 200 300 500 700 1.0k

500k

100

200

500

1.0k

10k

5.0k

20k

50k

100k

200k

2.0k

1.0M

20 30 50 70 100 200 300 500 700 1.0k

BANDWIDTH = 1.0 Hz

5.0 dB

0.5 dB

1.0 dB

2.0 dB

3.0 dB

5.0 dB

0.5 dB

1.0 dB

2.0 dB

3.0 dB

5.0 dB

TYPICAL STATIC CHARACTERISTICS

Figure 6. DC Current Gain

I

C

, COLLECTOR CURRENT (mA)

400

0.003

h , DC CURRENT GAIN

FE

T

J

= 125°C

-55°C

25°C

V

CE

= 1.0 V

V

CE

= 10 V

40

60

0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0

2.0

3.0

5.0 7.0 10 20 30 50 70 100

200

100

80

BCX71JLT1G

BCX71JLT1G

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