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SIC634CD-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
SiC634
www.vishay.com
Vishay Siliconix
S17-1583-Rev. B, 16-Oct-17
1
Document Number: 76784
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
50 A VRPower
®
Integrated Power Stage
DESCRIPTION
The SiC634 is integrated power stage solutions optimized
for synchronous buck applications to offer high current, high
efficiency, and high power density performance. Packaged
in Vishay’s proprietary
5 mm x 5 mm
MLP package, SiC634
enables voltage regulator designs to deliver up to 50 A
continuous current per phase.
The internal power MOSFETs utilizes Vishay’s
state-of-the-art Gen IV TrenchFET technology that delivers
industry benchmark performance to significantly reduce
switching and conduction losses.
The SiC634 incorporates an advanced MOSFET gate driver
IC that features high current driving capability, adaptive
dead-time control, an integrated bootstrap Schottky diode,
and zero current detection to improve light load efficiency.
The driver is also compatible with a wide range of PWM
controllers, supports tri-state PWM, and 5 V PWM logic.
A user selectable diode emulation mode (ZCD_EN#) is
included to improve the light load performance. The device
also supports PS4 mode to reduce power consumption
when system operates in standby state.
FEATURES
• Thermally enhanced PowerPAK
®
MLP55-31L
package
• Vishay’s Gen IV MOSFET technology and a
low-side MOSFET with integrated Schottky
diode
• Delivers in excess of 50 A continuous current,
55 A at 10 ms peak current
• High efficiency performance
• High frequency operation up to 2 MHz
• Power MOSFETs optimized for 19 V input stage
• 5 V PWM logic with tri-state and hold-off
• Supports PS4 mode light load requirement for IMVP8 with
low shutdown supply current (5 V, 3 μA)
• Under voltage lockout for V
CIN
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Multi-phase VRDs for computing, graphics card and
memory
• Intel IMVP-8 VRPower delivery
- V
CORE
, V
GRAPHICS
, V
SYSTEM AGENT
Skylake, Kabylake
platforms
- V
CCGI
for Apollo Lake platforms
• Up to 24 V rail input DC/DC VR modules
TYPICAL APPLICATION DIAGRAM
Fig. 1 - SiC634 Typical Application Diagram
PWM
controller
Gate
driver
5V V
IN
V
OUT
V
CIN
ZCD_EN#
PWM
V
DRV
V
IN
BOOT
V
SWH
P
GND
GL
C
GND
PHASE
SiC634
www.vishay.com
Vishay Siliconix
S17-1583-Rev. B, 16-Oct-17
2
Document Number: 76784
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PINOUT CONFIGURATION
Fig. 2 - SiC634 Pin Configuration
PIN CONFIGURATION
PIN NUMBER NAME FUNCTION
1 PWM PWM input logic
2 ZCD_EN#
The ZCD_EN# pin enables or disables diode emulation. When ZCD_EN# is LOW, diode emulation is
allowed. When ZCD_EN# is HIGH, continuous conduction mode is forced.
ZCD_EN# can also be put in a high impedance mode by floating the pin. If both ZCD_EN# and PWM
are floating, the device shuts down and consumes typically 3 μA (9 μA max.) current.
3V
CIN
Supply voltage for internal logic circuitry
5 BOOT High-side driver bootstrap voltage
4, 6, 30, 31 N.C.
Pin 4 can be either left floating or connected to C
GND
. Internally it is either
connected to GND or not internally connected depending on manufacturing
location.
Factory code “G” on line 3, pin 4 = C
GND
Factory code “T” on line 3, pin 4 = not internally connected
7 PHASE Return path of high-side gate driver
8 to 11, 34 V
IN
Power stage input voltage. Drain of high-side MOSFET
12 to 15, 28, 35 P
GND
Power ground
16 to 26 V
SWH
Phase node of the power stage
27, 33 GL Low-side MOSFET gate signal
29 V
DRV
Supply voltage for internal gate driver
32 C
GND
Signal ground
ORDERING INFORMATION
PART NUMBER PACKAGE MARKING CODE OPTION
SiC634CD-T1-GE3 PowerPAK MLP55-31L SiC634 5 V PWM optimized
SiC634DB Reference board
P
GND
N.C.
BOOT
PHASE
V
IN
P
GND
P
GND
P
GND
P
GND
V
IN
V
IN
V
IN
N.C.
GL
V
DRV
N.C.
N.C.
PWM
ZCD_EN#
V
CIN
PGND
VIN
CGND
GL
P
GND
N.C.
BOOT
PHASE
V
IN
P
GND
P
GND
P
GND
P
GND
V
IN
V
IN
V
IN
N.C.
GL
V
DRV
N.C.
N.C.
PWM
ZCD_EN#
V
CIN
35
P
GND
34
V
IN
32
C
GND
GL
2
1
4
3
6
5
8
7
2425262728293031
1514131211109
2
1
4
3
6
5
8
7
15 14 13 12 11 10 9
24 25 26 27 28 29 30 31
V
SWH
23
V
SWH
V
SWH
V
SWH
V
SWH
V
SWH
V
SWH
33
GL
V
SWH
22
V
SWH
21
V
SWH
20
V
SWH
19
V
SWH
18
V
SWH
17
V
SWH
16
23 V
SWH
22 V
SWH
21 V
SWH
20 V
SWH
19 V
SWH
16 V
SWH
18 V
SWH
17 V
SWH
G Y W W
P/N
LL
T Y W W
P/N
LL
SiC634
www.vishay.com
Vishay Siliconix
S17-1583-Rev. B, 16-Oct-17
3
Document Number: 76784
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PART MARKING INFORMATION
Notes
• Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the
specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability
(1)
The specification values indicated “AC” is V
SWH
to P
GND
-8 V (< 20 ns, 10 μJ), min. and 35 V (< 50 ns), max.
(2)
The specification value indicates “AC voltage” is V
BOOT
to P
GND
, 40 V (< 50 ns) max.
(3)
The specification value indicates “AC voltage” is V
BOOT
to V
PHASE
, 8 V (< 50 ns) max.
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL PARAMETER CONDITIONS LIMIT UNIT
Input voltage V
IN
-0.3 to +28
V
Control logic supply voltage V
CIN
-0.3 to +7
Drive supply voltage V
DRV
-0.3 to +7
Switch node (DC voltage)
V
SWH
-0.3 to +28
Switch node (AC voltage)
(1)
-7 to +35
BOOT voltage (DC voltage)
V
BOOT
33
BOOT voltage (AC voltage)
(2)
40
BOOT to PHASE (DC voltage)
V
BOOT-PHASE
-0.3 to +7
BOOT to PHASE (AC voltage)
(3)
-0.3 to +8
All logic inputs and outputs
(PWM, ZCD_EN#)
-0.3 to V
CIN
+0.3
Max. operating junction temperature T
J
150
°CAmbient temperature T
A
-40 to +125
Storage temperature T
stg
-65 to +150
Electrostatic discharge protection
Human body model, JESD22-A114 2000
V
Charged device model, JESD22-C101 1000
RECOMMENDED OPERATING RANGE
ELECTRICAL PARAMETER MINIMUM TYPICAL MAXIMUM UNIT
Input voltage (V
IN
)4.5-24
V
Drive supply voltage (V
DRV
) 4.555.5
Control logic supply voltage (V
CIN
) 4.555.5
BOOT to PHASE (V
BOOT-PHASE
, DC voltage) 4 4.5 5.5
Thermal resistance from junction to ambient - 10.6 -
°C/W
Thermal resistance from junction to case - 1.6 -
= Pin 1 Indicator
P/N = Part Number Code
= Siliconix Logo
= ESD Symbol
F = Assembly Factory Code
Y = Year Code
WW = Week Code
LL = Lot Code
F Y W W
P/N
LL
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18

SIC634CD-T1-GE3

Mfr. #:
Buy SIC634CD-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
Gate Drivers 50A VRPower MLP55-31L
Lifecycle:
New from this manufacturer.
Delivery:
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