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FST8320M

P1-P2
V
RRM
= 20 V - 100 V
I
F
= 80 A
Features
• High Surge Capability D61-3M Package
• Types up to 100V V
RRM
Parameter Symbol FST8320M FST78330
M
Unit
Re
p
etitive
p
eak reverse volta
g
e
V
RRM
20 30 V
Conditions
40
FST8320M thru FST8340M
FST8340M
35
FST8335M
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
Silicon Power
Schottk
y
Diode
pp g
RMS reverse voltage
V
RMS
14 21 V
DC blocking voltage
V
DC
20 30 V
Continuous forward current
I
F
80 80 A
Operating temperature
T
j
-40 to 175 -40 to 175 °C
Storage temperature
T
stg
-40 to 175 -40 to 175 °C
Parameter Symbol FST8320M FST8330M Unit
Diode forward voltage 0.65 0.65
1.5 1.5
500 500
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
1.2 1.2 °C/W
-40 to 175 -40 to 175
T
C
= 25 °C, t
p
= 8.3 ms
28
4035
-40 to 175
FST78340M
1.5 1.5
FST8335M
1.2
V
R
= 20 V, T
j
= 125 °C
1.2
0.65 0.65
500
mA
V
V
R
= 20 V, T
j
= 25 °C
I
F
= 80 A, T
j
= 25 °C
T
C
≤ 110 °C
Conditions
35
800 800
-40 to 175
80 80
800
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
Reverse current
I
R
V
F
500
A800
www.genesicsemi.com
1
FST8320M thru FST8340M
www.genesicsemi.com
2
P1-P2

FST8320M

Mfr. #:
Buy FST8320M
Manufacturer:
GeneSiC Semiconductor
Description:
Schottky Diodes & Rectifiers 20V 80A Schottky Recovery
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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